A wideband digital variable gain amplifier with DC offset cancellation in SiGe 0.18µm BiCMOS technology

Author(s):  
Muting Lu ◽  
Thangarasu Bharatha Kumar ◽  
Dawei Zhang ◽  
Xiaopeng Yu ◽  
Kiat Seng Yeo
IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 54139-54146 ◽  
Author(s):  
Zhiqing Liu ◽  
Yunqiu Wu ◽  
Chenxi Zhao ◽  
Johannes Benedikt ◽  
Kai Kang

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 61826-61832 ◽  
Author(s):  
Long He ◽  
Lianming Li ◽  
Xu Wu ◽  
Zhigong Wang

2019 ◽  
Vol 66 (10) ◽  
pp. 1693-1697
Author(s):  
Alessandro Finocchiaro ◽  
Giuseppe Papotto ◽  
Egidio Ragonese ◽  
Giuseppe Palmisano

2012 ◽  
Vol 33 (8) ◽  
pp. 085003 ◽  
Author(s):  
Chang Liu ◽  
Yuepeng Yan ◽  
Goh Wang-Ling ◽  
Yongzhong Xiong ◽  
Lijun Zhang ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhengyu Sun ◽  
Yuepeng Yan

A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper amplifier to maintain a broad bandwidth while covering a wide gain range. Postlayout simulation results confirm that the proposed circuit achieves a 2 GHz 3-dB bandwidth with wide linear-in-dB gain tuning range from −19 dB up to 61 dB. The amplifier offers a competitive gain bandwidth product of 2805 GHz at the maximum gain for a 110-GHz ftBiCMOS technology. The amplifier core consumes 31 mW from a 3.3 V supply and occupies active area of 280 μm by 140 μm.


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