A 60-GHz low-noise variable-gain amplifier in a 130-nm BiCMOS technology for sixport applications

Author(s):  
Matthias Volkel ◽  
Marco Dietz ◽  
Amelie Hagelauer ◽  
Robert Weigel ◽  
Dietmar Kissinger
2011 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Srdjan Glisic ◽  
J. Christoph Scheytt ◽  
Yaoming Sun ◽  
Frank Herzel ◽  
Ruoyu Wang ◽  
...  

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.


2019 ◽  
Vol 66 (7) ◽  
pp. 1104-1108 ◽  
Author(s):  
Filipe Dias Baumgratz ◽  
Carlos Saavedra ◽  
Michiel Steyaert ◽  
Filip Tavernier ◽  
Sergio Bampi

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhengyu Sun ◽  
Yuepeng Yan

A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper amplifier to maintain a broad bandwidth while covering a wide gain range. Postlayout simulation results confirm that the proposed circuit achieves a 2 GHz 3-dB bandwidth with wide linear-in-dB gain tuning range from −19 dB up to 61 dB. The amplifier offers a competitive gain bandwidth product of 2805 GHz at the maximum gain for a 110-GHz ftBiCMOS technology. The amplifier core consumes 31 mW from a 3.3 V supply and occupies active area of 280 μm by 140 μm.


1996 ◽  
Vol 31 (5) ◽  
pp. 714-718 ◽  
Author(s):  
K.W. Kobayashi ◽  
D.K. Umemoto ◽  
T.R. Block ◽  
A.K. Oki ◽  
D.C. Streit

2012 ◽  
Vol 195-196 ◽  
pp. 84-89
Author(s):  
Da Hui Zhang ◽  
Ze Dong Nie ◽  
Feng Guan ◽  
Lei Wang

A low-power, wideband signaling receiver for data transmission through a human body was presented in this paper. The receiver utilized a novel implementation of energy-efficient wideband impulse communication that uses the human body as the transmission medium, provides low power consumption, high reception sensitivity. The receiver consists of a low-noise amplifier, active balun, variable gain amplifier (VGA) Gm-C filter, comparator, and FSK demodulator. It was designed with 0.18um CMOS process in an active area of 1.54mm0.414mm. Post-simulation showed that the receiver has a gain range of-2dB~40dB. The receiver consumes 4mW at 1.8V supply and achieves transmission bit energy of 0.8nJ/bit.


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