scholarly journals Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhengyu Sun ◽  
Yuepeng Yan
Keyword(s):  
Current Gain ◽  
Variable Gain Amplifier ◽  
Current Steering ◽  
Gain Bandwidth ◽  
Broad Bandwidth ◽  
Variable Gain ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Steering Current

A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper amplifier to maintain a broad bandwidth while covering a wide gain range. Postlayout simulation results confirm that the proposed circuit achieves a 2 GHz 3-dB bandwidth with wide linear-in-dB gain tuning range from −19 dB up to 61 dB. The amplifier offers a competitive gain bandwidth product of 2805 GHz at the maximum gain for a 110-GHz ftBiCMOS technology. The amplifier core consumes 31 mW from a 3.3 V supply and occupies active area of 280 μm by 140 μm.

An E-band Variable Gain Amplifier with 24 dB-control range and 80 to 100 GHz 1 dB bandwidth in SiGe BiCMOS technology

Frequenz ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Francesco Centurelli ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Pasquale Tommasino ◽  
Alessandro Trifiletti
Keyword(s):  
Dynamic Range ◽  
Gain Control ◽  
Variable Gain Amplifier ◽  
Control Range ◽  
Variable Gain ◽  
Bicmos Technology ◽  
Commercial Technology ◽  
Sige Bicmos ◽  
Analysis Design

Abstract Analysis, design, and characterization of an E-band Variable Gain Amplifier (VGA) in SiGe BiCMOS commercial technology is presented. VGA topologies are compared in terms of their capability to contribute to receiver linearity and dynamic range. The proposed VGA is based on a Gilbert multiplier cell exploiting current cancellation to enhance control range and linearity. A 1 dB bandwidth ranging from 80 to 100 GHz, a 24 dB gain control range and a −11.5 dBm input 1 dB compression point have been measured.

A Fully Differential Variable Gain Amplifier for Portable Impedance Sensing Applications

2019 ◽  
Vol 7 ◽  
Author(s):  
Jorge Pérez Bailón ◽  
Jaime Ramírez-Angulo ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Active Area ◽  
Variable Gain Amplifier ◽  
Cmos Process ◽  
Current Steering ◽  
Impedance Sensing ◽  
Variable Gain ◽  
Fully Differential ◽  
Sensing Applications ◽  
Constant Bandwidth

This paper presents a Variable Gain Amplifier (VGA) designed in a 0.18 μm CMOS process to operate in an impedance sensing interface. Based on a transconductance-transimpedance (TC-TI) approach with intermediate analog-controlled current steering, it exhibits a gain ranging from 5 dB to 38 dB with a constant bandwidth around 318 kHz, a power consumption of 15.5 μW at a 1.8 V supply and an active area of 0.021 mm2.

scholarly journals Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product

2017 ◽  
Vol 15 ◽  
pp. 115-121
Author(s):  
Sehoon Park ◽  
Xuan-Quang Du ◽  
Markus Grözing ◽  
Manfred Berroth
Keyword(s):  
Group Delay ◽  
Supply Voltage ◽  
Input Voltage ◽  
Power Supply Voltage ◽  
Gain Bandwidth ◽  
Chip Area ◽  
Limiting Amplifier ◽  
Inductive Peaking ◽  
Bicmos Technology ◽  
Sige Bicmos

Abstract. This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The proposed design uses a Cherry-Hooper topology for bandwidth enhancement and is optimized for maximum group delay flatness to minimize phase distortion of the input signal. With regard to a high integration density and a small chip area, the design employs no passive inductors which might be used to boost the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout simulation level, the limiting amplifier exhibits a gain-bandwidth-product of 14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a peak-to-peak input voltage of 1.5 mV. The group delay variation within the 3 dB bandwidth is less than 0.5 ps and the power dissipation at a power supply voltage of 3 V including output drivers is 837 mW.

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