Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm

2012 ◽  
Vol 5 (10) ◽  
pp. 104201 ◽  
Author(s):  
Xiuju Zhou ◽  
Qiang Li ◽  
Chak Wah Tang ◽  
Kei May Lau
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Si Substrate ◽  
High Electron Mobility

Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor

2014 ◽  
Vol 11 (3-4) ◽  
pp. 844-847 ◽  
Author(s):  
Raphael Brown ◽  
Abdullah Al-Khalidi ◽  
Douglas Macfarlane ◽  
Sanna Taking ◽  
Gary Ternent ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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