High Current Gain Silicon Carbide Bipolar Power Transistors

2006 ◽  
Author(s):  
M. Domeij ◽  
Hyung-Seok Lee ◽  
C.-M. Zetterling ◽  
M. Ostling ◽  
A. Schoner
Keyword(s):  
Silicon Carbide ◽  
Current Gain ◽  
High Current ◽  
Power Transistors

Challenges on Drive Circuit Design for Series-Connected SiC Power Transistors

2017 ◽  
Vol 897 ◽  
pp. 655-660
Author(s):  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Hans Peter Nee ◽  
Tore Undeland
Keyword(s):  
Finite Element Method ◽  
Silicon Carbide ◽  
Circuit Design ◽  
The Other ◽  
Experimental Investigations ◽  
High Current ◽  
Power Transistors ◽  
Fast Switching ◽  
Drive Circuit ◽  
Design Challenges

The breakdown voltages of the currently available 1.2 and 1.7-kV classes Silicon Carbide (SiC) transistors are not sufficient to operate under medium blocking voltages. On the other hand, the fabrication yields of the available high-voltage SiC transistors are still low, resulting in low current capabilities. Series-connection of several individual transistors is the solution to meet medium blocking voltages and high current ratings. This paper identifies the most crucial design challenges of gate and base drive circuits suitable for driving fast-switching series-connected SiC transistors. These challenges are presented and analyzed using Finite Element Method simulations and experimental investigations.

scholarly journals Short-Circuit Capability Exploration of Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Electronic Systems ◽  
Power Electronic ◽  
Power Transistor ◽  
Power Transistors ◽  
Capacitive Load ◽  
Short Circuit Condition

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.

scholarly journals Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

Sensors ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 74 ◽  
Author(s):  
Sang-Won Lee ◽  
Seung-Hwan Cha ◽  
Kyung-Jae Choi ◽  
Byoung-Ho Kang ◽  
Jae-Sung Lee ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Dark Current ◽  
Current Gain ◽  
High Current ◽  
Uv Photodetector

High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

1988 ◽  
Vol 9 (10) ◽  
pp. 524-526 ◽  
Author(s):  
R.N. Nottenburg ◽  
Y.-K. Chen ◽  
M.B. Panish ◽  
R. Hamm ◽  
D.A. Humphrey
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
High Current

Simple method for increasing current gain and voltage ratings of power transistors

1987 ◽  
Vol 23 (23) ◽  
pp. 1213
Author(s):  
A. Silard ◽  
F. Floru ◽  
C. Stefan ◽  
G. Nani
Keyword(s):  
Current Gain ◽  
Simple Method ◽  
Power Transistors
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