A dVS/dt Noise Immunity Improvement Structure Based on Slope Sensing Technology for 200V High Voltage Gate Drive Circuit

Author(s):  
Siyuan Yu ◽  
Jing Zhu ◽  
Weifeng Sun ◽  
Yangyang Lu ◽  
Yunqi Wang ◽  
...  
2018 ◽  
Vol 65 (4) ◽  
pp. 3027-3034 ◽  
Author(s):  
Jing Zhu ◽  
Yunwu Zhang ◽  
Weifeng Sun ◽  
Yangyang Lu ◽  
Longxing Shi ◽  
...  

2014 ◽  
Vol 668-669 ◽  
pp. 812-817
Author(s):  
De Hui Lin ◽  
Ping Lou ◽  
Hui Pin Lin

This paper introduces a kind of monolithic emitter switched bipolar transistor (ESBT) for three-phase rectifier applications and other high voltage applications. This paper proposes an improved driving circuit, combining the soft switch circuit. We made a flyback circuit prototype which the rated power is 80W, and the maximum input voltage is 800V, and compared with the existing driving circuit.


2012 ◽  
Vol 51 ◽  
pp. 07GF23 ◽  
Author(s):  
Keisuke Takada ◽  
Jumpei Okada ◽  
Kotaro Nakamura ◽  
Shin Yoshizawa ◽  
Shin-ichiro Umemura

2016 ◽  
Vol 55 (7S1) ◽  
pp. 07KF17 ◽  
Author(s):  
Satoshi Tamano ◽  
Hayato Jimbo ◽  
Takashi Azuma ◽  
Shin Yoshizawa ◽  
Keisuke Fujiwara ◽  
...  

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