Carbon nanotube field effect transistors - fabrication, device physics, and circuit implications

Author(s):  
H.-S.P. Wong ◽  
J. Appenzeller ◽  
V. Derycke ◽  
R. Martel ◽  
S. Wind ◽  
...  
2006 ◽  
Vol 16 (04) ◽  
pp. 897-912 ◽  
Author(s):  
JING GUO ◽  
SIYURANGA O. KOSWATTA ◽  
NEOPHYTOS NEOPHYTOU ◽  
MARK LUNDSTROM

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.


2014 ◽  
Vol 6 (3) ◽  
pp. 287-292 ◽  
Author(s):  
Jingqi Li ◽  
Weisheng Yue ◽  
Zaibing Guo ◽  
Yang Yang ◽  
Xianbin Wang ◽  
...  

Author(s):  
Hadi Hosseinzadegan ◽  
Hossein Aghababa ◽  
Mahmoud Zangeneh ◽  
Ali Afzali-kusha ◽  
Behjat Forouzandeh

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  

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