In Situ Raman Mapping of Charge Carrier Distribution in Electrolyte-Gated Carbon Nanotube Network Field-Effect Transistors

2013 ◽  
Vol 117 (49) ◽  
pp. 26361-26370 ◽  
Author(s):  
Jana Zaumseil ◽  
Florian Jakubka ◽  
Ming Wang ◽  
Florentina Gannott
Keyword(s):  
Carbon Nanotube ◽  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Raman Mapping ◽  
Carrier Distribution ◽  
In Situ Raman ◽  
Carbon Nanotube Network

scholarly journals Label-free detection of DNA hybridization using carbon nanotube network field-effect transistors

2006 ◽  
Vol 103 (4) ◽  
pp. 921-926 ◽  
Author(s):  
A. Star ◽  
E. Tu ◽  
J. Niemann ◽  
J.-C. P. Gabriel ◽  
C. S. Joiner ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Dna Hybridization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Label Free ◽  
Label Free Detection ◽  
Carbon Nanotube Network

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

Self-gating effects in carbon nanotube network based liquid gate field effect transistors

2008 ◽  
Vol 93 (24) ◽  
pp. 243115 ◽  
Author(s):  
Dong Wan Kim ◽  
Gyu Sik Choe ◽  
Sung Min Seo ◽  
Jun Ho Cheon ◽  
Hansuk Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carbon Nanotube Network

Comprehensive insights into effect of van der Waals contact on carbon nanotube network field-effect transistors

2019 ◽  
Vol 115 (17) ◽  
pp. 173503 ◽  
Author(s):  
Hao Huang ◽  
Xingqiang Liu ◽  
Fang Liu ◽  
Chuansheng Liu ◽  
Xuelei Liang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Carbon Nanotube Network

Adjustable hydrazine modulation of single-wall carbon nanotube network field effect transistors from p-type to n-type

2016 ◽  
Vol 27 (44) ◽  
pp. 445203 ◽  
Author(s):  
Ruixuan Dai ◽  
Dan Xie ◽  
Jianlong Xu ◽  
Yilin Sun ◽  
MengXing Sun ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Carbon Nanotube Network ◽  
P Type
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