Numerical simulation of interfacial delamination in electronic packaging

2002 ◽  
Author(s):  
B. Wang ◽  
X. Sun ◽  
Q.S. Fan ◽  
Y. Yin
Keyword(s):  
Numerical Simulation ◽  
Electronic Packaging ◽  
Interfacial Delamination

Numerical simulation on thixoforging of electronic packaging shell with SiCp/A356 composites

2010 ◽  
Vol 20 (9) ◽  
pp. 1707-1711
Author(s):  
Kai-kun WANG ◽  
Fu-yu WANG ◽  
Xue-jun CHEN ◽  
Lu WANG ◽  
Chun-mei MA
Keyword(s):  
Numerical Simulation ◽  
Electronic Packaging

Interfacial Delamination Propagation in Multi-Layered High-Density Wiring Electronic Packaging Structures

2000 ◽  
Author(s):  
Hurang Hu ◽  
Weidong Xie ◽  
Suresh Sitaraman
Keyword(s):  
Energy Release Rate ◽  
Energy Release ◽  
Analytical Model ◽  
Elastic Material ◽  
Release Rate ◽  
Material Properties ◽  
Electronic Packaging ◽  
Base Layer ◽  
Interfacial Delamination ◽  
Delamination Propagation

Abstract One of the most common failure modes in multi-layered electronic packaging structures is interfacial delamination. The objective of this research is to examine the possibilities of interfacial delamination in a next-generation electronic packaging structure under thermal loading. A sophisticated analytical model has been developed to determine energy release rate and stress intensity factor for delamination propagation. The model takes into consideration the temperature-dependent material properties as well as direction-dependent material properties. Although delamination between two adjacent layers is studied, the model takes into consideration the effect of all dielectric, metallization, and substrate layers in the multi-layered structure. Assuming that an initial delamination exists between the base layer and the Copper metallization layer, the present work studies the propagation of delamination. In the analytical model, the base layer is modeled as an orthotropic thermo-elastic material. Copper and the polymer dielectric materials are modeled as isotropic thermo-elastic material. For the Copper/base layer interface, the variation of bimaterial constant (ε) with temperature is obtained through the analytical model. The effect of some key parameters, such as materials Young’s modulus, coefficient of thermal expansion, and the base layer thickness on energy release rate is presented. Design recommendations for improved thermo-mechanical reliability are proposed.

Numerical simulation of interfacial delamination between SiO2 thin film and polymeric substrate

2019 ◽  
Author(s):  
O. Dalverny ◽  
A. Tongne ◽  
C. Ho ◽  
J. Alexis ◽  
S. Châtel ◽  
...  
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Polymeric Substrate ◽  
Interfacial Delamination ◽  
Sio2 Thin Film

Shear strength and fracture mechanism for full Cu-Sn IMCs solder joints with different Cu3Sn proportion and joints with conventional interfacial structure in electronic packaging

2019 ◽  
Vol 31 (1) ◽  
pp. 6-19 ◽  
Author(s):  
Peng Yao ◽  
Xiaoyan Li ◽  
Xu Han ◽  
Liufeng Xu
Keyword(s):  
Shear Strength ◽  
Cleavage Fracture ◽  
Electronic Packaging ◽  
Fracture Mechanism ◽  
Sandwich Structure ◽  
Fracture Morphology ◽  
Interfacial Structure ◽  
Transgranular Fracture ◽  
Content Type ◽  
Interfacial Delamination

Purpose This study aims to analyze the shear strength and fracture mechanism of full Cu-Sn IMCs joints with different Cu3Sn proportion and joints with the conventional interfacial structure in electronic packaging. Design/methodology/approach The Cu-Sn IMCs joints with different Cu3Sn proportion were fabricated through soldering Cu-6 μm Sn-Cu sandwich structure under the extended soldering time and suitable pressure. The joints of conventional interfacial structure were fabricated through soldering Cu-100 μm Sn-Cu sandwich structure. After the shear test was conducted, the fracture mechanism of different joints was studied through observing the cross-sectional fracture morphology and top-view fracture morphology of sheared joints. Findings The strength of joints with the conventional interfacial structure was 26.6 MPa, while the strength of full Cu-Sn IMCs joints with 46.7, 60.6, 76.7 and 100 per cent Cu3Sn was, respectively, 33.5, 39.7, 45.7 and 57.9 MPa. The detailed reason for the strength of joints showing such regularity was proposed. For the joint of conventional interfacial structure, the microvoids accumulation fracture happened within the Sn solder. However, for the full Cu-Sn IMCs joint with 46.7 per cent Cu3Sn, the cleavage fracture happened within the Cu6Sn5. As the Cu3Sn proportion increased to 60.6 per cent, the inter-granular fracture, which resulted in the interfacial delamination of Cu3Sn and Cu6Sn5, occurred along the Cu3Sn/Cu6Sn5 interface, while the cleavage fracture happened within the Cu6Sn5. Then, with the Cu3Sn proportion increasing to 76.7 per cent, the cleavage fracture happened within the Cu6Sn5, while the transgranular fracture happened within the Cu3Sn. The inter-granular fracture, which led to the interfacial delamination of Cu3Sn and Cu, happened along the Cu/Cu3Sn interface. For the full Cu3Sn joint, the cleavage fracture happened within the Cu3Sn. Originality/value The shear strength and fracture mechanism of full Cu-Sn IMCs joints was systematically studied. A direct comparison regarding the shear strength and fracture mechanism between the full Cu-Sn IMCs joints and joints with the conventional interfacial structure was conducted.

Water uptake by substituted amylose tablets: experimentation and numerical simulation

2009 ◽  
Vol 00 (00) ◽  
pp. 090904073309027-8
Author(s):  
H.W. Wang ◽  
S. Kyriacos ◽  
L. Cartilier
Keyword(s):  
Numerical Simulation ◽  
Water Uptake
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