Numerical simulation of interfacial delamination between SiO2 thin film and polymeric substrate

2019 ◽  
Author(s):  
O. Dalverny ◽  
A. Tongne ◽  
C. Ho ◽  
J. Alexis ◽  
S. Châtel ◽  
...  
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Polymeric Substrate ◽  
Interfacial Delamination ◽  
Sio2 Thin Film

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Numerical simulation of the liquid phase in SnO2 thin film deposition by sol-gel-dip-coating

2010 ◽  
Vol 55 (3) ◽  
pp. 385-393 ◽  
Author(s):  
Dayene M. Carvalho ◽  
Jorge L. B. Maciel ◽  
Leandro P. Ravaro ◽  
Rogério E. Garcia ◽  
Valdemir G. Ferreira ◽  
...  
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Liquid Phase ◽  
Sol Gel ◽  
Thin Film Deposition ◽  
Dip Coating ◽  
Film Deposition ◽  
Sno2 Thin Film

An Interfacial Delamination Analysis for Multichip Module Thin Film Interconnects

1996 ◽  
Vol 118 (4) ◽  
pp. 206-213 ◽  
Author(s):  
K. X. Hu ◽  
C. P. Yeh ◽  
X. S. Wu ◽  
K. Wyatt
Keyword(s):  
Thin Film ◽  
Phase Angle ◽  
Structural Reliability ◽  
Thermal Loading ◽  
Multichip Module ◽  
Crack Model ◽  
Element Analysis ◽  
Delamination Growth ◽  
Interfacial Delamination ◽  
Functional Behavior

Analysis of interfacial delamination for multichip module thin-film interconnects (MCM/TFI) is the primary objective of this paper. An interface crack model is integrated with finite-element analysis to allow for accurate numerical evaluation of the magnitude and phase angle of the complex stress intensity factor. Under the assumption of quasi-static delamination growth, the fate of an interfacial delamination after inception of propagation is determined. It is established that whether an interfacial delamination will continue to grow or become arrested depends on the functional behavior of the energy release rate and loading phase angle over the history of delamination growth. This functional behavior is numerically obtained for a typical MCM/TFI structure with delamination along die and via base, subjected to thermal loading condition. The effect of delamination interactions on the structural reliability is also investigated. It is observed that the delamination along via wall and polymer thin film can provide a benevolent mechanism to relieve thermal constraints, leading to via stress relaxation.

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