ZnO nanowires film UV detector based MSM structure

Author(s):  
Y.N He ◽  
W Zhang ◽  
S C Zhang ◽  
M Qi ◽  
M Ye ◽  
...  
2012 ◽  
Vol 166-167 ◽  
pp. 12-16 ◽  
Author(s):  
Liang Guo ◽  
Hong Zhang ◽  
Dongxu Zhao ◽  
Binghui Li ◽  
Zhenzhong Zhang ◽  
...  

2016 ◽  
Author(s):  
Xiangming Gao ◽  
Shuo Wang ◽  
Hongxia Ran ◽  
Ruifeng Liu ◽  
Jinshe Yuan

RSC Advances ◽  
2015 ◽  
Vol 5 (82) ◽  
pp. 66738-66741 ◽  
Author(s):  
Yiyu Zeng ◽  
Xinhua Pan ◽  
Wen Dai ◽  
Yunchao Chen ◽  
Zhizhen Ye

A Ag nanoparticle-modified ZnO NWs based UV detector displays an excellent performance in UV detection such as high responsivity and fast response time.


NANO ◽  
2017 ◽  
Vol 12 (04) ◽  
pp. 1750044 ◽  
Author(s):  
M. M. Haji Shahkarami ◽  
J. Koohsorkhi ◽  
H. Ghafoori Fard

In this paper, we have reported the high sensitive UV detector using ZnO nanowires prepared on porous silicon (PS). The aligned naturally doped n-type zinc oxide (ZnO) nanowires were grown on both PS and n-Si(100) substrates to produce isotype heterojunctions using hydrothermal method. The length of the nanowires ranges 3–4[Formula: see text][Formula: see text]m and the diameter 150–200[Formula: see text]nm. Grown ZnO nanowires on PS substrate has lower reflectivity value compared with Si substrate. The electrical behavior of such devices has been examined at different intensities of UV radiation. The current–voltage curve of the isotype heterojunction shows rectifying behavior in a dark environment. Under UV light, the current was increased by using PS instead of n-Si under reverse bias. The I–V characteristics of the device show a significant rise in the current for low intensity of UV radiation evidencing the high sensitivity of the reported structure. The sensitivity for such devices is obtained, [Formula: see text] and [Formula: see text] at UV radiation of 1.5[Formula: see text]mW/cm2 intensity at bias voltage of −0.75 V for three proposed structures. The samples have been analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate their structures and geometries.


RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31316-31322 ◽  
Author(s):  
Yiyu Zeng ◽  
Xinhua Pan ◽  
Bin Lu ◽  
Zhizhen Ye

The flexible self-powered UV detector based on ZnO NWs shows good performance both in flat and bending conditions.


2015 ◽  
Vol 32 (2) ◽  
pp. 52-54 ◽  
Author(s):  
Bo Zhao ◽  
Nan Wang ◽  
Guohua Jiang

Purpose – The purpose of this paper is to arrange zinc oxide (ZnO) nanowires into an appropriate position on electrodes and to research the properties of ZnO nanowires. Design/methodology/approach – In this paper, dielectrophoresis (DEP) was used to fabricate ZnO nanowire devices, and the responses to temperature, ultraviolet (UV) light and breath of the device were studied. Findings – The number of the bridged nanowires is increased with alternating current voltage. ZnO nanowires demonstrate a good photoconductivity illuminated by 365-nm UV light, and show a stable performance in monitoring unnatural breath of high frequency and low strength. Originality/value – In this paper, DEP is a promising method for controllable assembly of ZnO nanowires. ZnO nanowires demonstrate a good response to 365-nm UV light and exhaled breath, which show great potential application in UV detector and medical monitor.


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