Fabrication of High Sensitive UV Photodetector Based on n-ZnO Nanowire/n-Porous-Si Heterojunction

NANO ◽  
2017 ◽  
Vol 12 (04) ◽  
pp. 1750044 ◽  
Author(s):  
M. M. Haji Shahkarami ◽  
J. Koohsorkhi ◽  
H. Ghafoori Fard
Keyword(s):  
Uv Radiation ◽  
Uv Light ◽  
High Sensitivity ◽  
Significant Rise ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
Uv Detector ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

In this paper, we have reported the high sensitive UV detector using ZnO nanowires prepared on porous silicon (PS). The aligned naturally doped n-type zinc oxide (ZnO) nanowires were grown on both PS and n-Si(100) substrates to produce isotype heterojunctions using hydrothermal method. The length of the nanowires ranges 3–4[Formula: see text][Formula: see text]m and the diameter 150–200[Formula: see text]nm. Grown ZnO nanowires on PS substrate has lower reflectivity value compared with Si substrate. The electrical behavior of such devices has been examined at different intensities of UV radiation. The current–voltage curve of the isotype heterojunction shows rectifying behavior in a dark environment. Under UV light, the current was increased by using PS instead of n-Si under reverse bias. The I–V characteristics of the device show a significant rise in the current for low intensity of UV radiation evidencing the high sensitivity of the reported structure. The sensitivity for such devices is obtained, [Formula: see text] and [Formula: see text] at UV radiation of 1.5[Formula: see text]mW/cm2 intensity at bias voltage of −0.75 V for three proposed structures. The samples have been analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate their structures and geometries.

Optically Transparent of N-ZnO/p-NiO Heterojunction for Ultraviolet Photodetector Application

2011 ◽  
Vol 687 ◽  
pp. 711-715 ◽  
Author(s):  
Shu Yi Tsai ◽  
Min Hsiung Hon ◽  
Yang Ming Lu
Keyword(s):  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Order Of Magnitude ◽  
Uv Visible ◽  
Diode Behavior ◽  
P Type

Transparent p–n heterojunction diodes consisting of n-type ZnO and p-type NiO thin films were prepared on glass substrates by r.f. magnetron sputtering. The structural and optical properties of the n-ZnO/p-NiO heterojunction were characterized by X-ray diffraction (XRD), UV–visible spectroscopy, Hall measurement, and I-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 2) orientation. The optical transmittances of ZnO and NiO films are 87% and 80%, respectively. The current–voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest of leakage current is 7.73x10−8 A/cm2 for n-ZnO/p-NiO heterojunction diode. Upon UV irradiation, it was found that the detector current was increased by more than one order of magnitude. It was also found that the corresponding time constant for turn-on transient was τon = 27.9 ms while that for turn-off transient was τoff= 62.8 ms.

Controllable assembly and properties of ZnO nanowires

2015 ◽  
Vol 32 (2) ◽  
pp. 52-54 ◽  
Author(s):  
Bo Zhao ◽  
Nan Wang ◽  
Guohua Jiang
Keyword(s):  
High Frequency ◽  
Design Methodology ◽  
Uv Light ◽  
Zno Nanowires ◽  
Exhaled Breath ◽  
Zno Nanowire ◽  
Uv Detector ◽  
Content Type ◽  
Current Voltage ◽  
Stable Performance

Purpose – The purpose of this paper is to arrange zinc oxide (ZnO) nanowires into an appropriate position on electrodes and to research the properties of ZnO nanowires. Design/methodology/approach – In this paper, dielectrophoresis (DEP) was used to fabricate ZnO nanowire devices, and the responses to temperature, ultraviolet (UV) light and breath of the device were studied. Findings – The number of the bridged nanowires is increased with alternating current voltage. ZnO nanowires demonstrate a good photoconductivity illuminated by 365-nm UV light, and show a stable performance in monitoring unnatural breath of high frequency and low strength. Originality/value – In this paper, DEP is a promising method for controllable assembly of ZnO nanowires. ZnO nanowires demonstrate a good response to 365-nm UV light and exhaled breath, which show great potential application in UV detector and medical monitor.

ATP-activated chloride channel inhibited by an antibody to P glycoprotein

1994 ◽  
Vol 267 (4) ◽  
pp. C1095-C1102 ◽  
Author(s):  
J. J. Zhang ◽  
T. J. Jacob
Keyword(s):  
Single Channel ◽  
Disulfonic Acid ◽  
Fiber Cells ◽  
Cl Channel ◽  
P Glycoprotein ◽  
Voltage Curve ◽  
Current Voltage ◽  
Single Channel Activity ◽  
Current Voltage Curve

In this report, we present the characteristics of a Cl- channel found in lens fiber cells. The single channel has a conductance of 17 pS, a linear current-voltage curve, is activated by ATP or strong depolarization and is blocked by verapamil, quinidine, 4,4'-diisothiocyanostilbene-2,2'-disulfonic acid, 5-nitro-2-(3- phenylpropylamino)benzoate, dideoxyforskolin, and tamoxifen. These properties are similar to those reported for a volume-activated Cl- channel associated with the multidrug resistance (MDR) gene product, P glycoprotein (24). Confirming this connection, we demonstrate that our lens Cl- channel is inhibited by an antibody to P glycoprotein. The data we present here may, therefore, be the first characterization of the single channel activity of the Cl- channel associated with P glycoprotein.

Evidence of Hysteresis in a New p-i-n-i-p-i-n Amorphous Silicon Device

1997 ◽  
Vol 467 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
F. Palma
Keyword(s):  
Charge Trapping ◽  
Bistable Behavior ◽  
Novel Device ◽  
Voltage Curve ◽  
Current Voltage ◽  
Recombination Processes ◽  
Current Voltage Curve ◽  
Numerical Device ◽  
Silicon Device

ABSTRACTA novel device based on a-Si:H p+-i-n−-i-p−-i-n+ structure, showing a hysteresis in its current-voltage curve is reported. A numerical device model allows to investigate in detail the fundamental role of the two lightly doped n− and p− layers, where charge trapping determines the bistable behavior of the device. The ON condition is mantained until the ambipolar charge injection overcomes the fixed charge. The transition OFF-ON starts when, increasing the applied voltage, one of the two lightly doped layers becomes completely depleted. The transition ON-OFF is, instead, mainly dependent on the recombination processes occurring in the central doped layers. Devices with hysteresis around 2 V and tum-on voltage around 12 are presented.

scholarly journals Modeling Asymmetry of a Current–Voltage Curve of a Novel MF-4SC/PTMSP Bilayer Membrane

Membranes ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 22
Author(s):  
Anatoly N. Filippov ◽  
Natalia A. Kononenko ◽  
Natalia V. Loza ◽  
Daria A. Petrova
Keyword(s):  
Good Accuracy ◽  
Thick Layer ◽  
Physicochemical Characteristics ◽  
Porous Membrane ◽  
Bilayer Membrane ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Exchange Membrane ◽  
A Current

A novel bilayer cation-exchange membrane—consisting of a thick layer of a pristine perfluorinated membrane MF-4SC (Russian equivalent of Nafion®-117) and a thinner layer (1 μm) of the membrane, on a base of glassy polymer of internal microporosity poly(1-trimethylsilyl-1-propyne) (PTMSP)—was prepared and characterized. Using the physicochemical characteristics of one-layer membranes MF-4SC and PTMSP in 0.05 M HCl and NaCl solutions, the asymmetric current–voltage curves (CVC) of the bilayer composite were described with good accuracy up to the overlimiting regime, based on the “fine-porous membrane” model. The MF-4SC/PTMSP bilayer composite has a significant asymmetry of CVC that is promising for using it in electromembrane devices, such as membrane detectors, sensors, and diodes.

scholarly journals The Cardiac Electrophysiology Web Lab

2015 ◽  
Author(s):  
Jonathan Cooper ◽  
Martin Scharm ◽  
Gary R Mirams
Keyword(s):  
Cardiac Electrophysiology ◽  
Computational Modelling ◽  
Cell Types ◽  
Virtual Experiments ◽  
Online Resource ◽  
Voltage Curve ◽  
Current Voltage ◽  
Wide Range ◽  
Current Voltage Curve ◽  
The Mathematical Model

Computational modelling of cardiac cellular electrophysiology has a long history, with many models now available for different species, cell types, and experimental preparations. This success brings with it a challenge: how do we assess and compare the underlying hypotheses and emergent behaviours, in order to choose a model as a suitable basis for a new study, or characterize how a particular model behaves in different scenarios? We have created an online resource for the characterization and comparison of electrophysiological cell models under a wide range of experimental scenarios. The details of the mathematical model (quantitative assumptions and hypotheses formulated as ordinary differential equations) are separated from the experimental protocol being simulated. Each model and protocol is then encoded in computer-readable formats. A simulation tool runs virtual experiments on models, and a website – https://chaste.cs.ox.ac.uk/FunctionalCuration – provides a friendly interface, allowing users to store and compare results. The system currently contains a sample of 36 models and 23 protocols, including current-voltage curve generation, action potential properties under steady pacing at different rates, restitution properties, block of particular channels, and hypo-/hyper-kalaemia. This resource is publicly available, open source, and free; and we invite the community to use it and become involved in future developments. Those interested in comparing competing hypotheses using models can make a more informed decision; those developing new models can upload them for easy evaluation under the existing protocols, and even add their own protocols.

scholarly journals Self-Cascode Current-Voltage Curve-Construction Algorithm from Single MOSFET Measurements for Analog Figures-of-Merit Extraction

2019 ◽  
Vol 14 (1) ◽  
pp. 1-6
Author(s):  
Li�gia Martins d'Oliveira ◽  
Valeriya Kilchytska ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Threshold Voltage ◽  
Extraction Method ◽  
New Technologies ◽  
Experimental Measurements ◽  
Saturation Regime ◽  
Figures Of Merit ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Self Cascode

This paper proposes a curve extraction method for I-V curves and analog figures-of-merit of self-cascode MOSFET associations (SC) using a code that exploits I-V curves of single transistors as input. The method was validated by using experimental measurements of fabricated SC and the very single transistors that compose them. The results indicate a very low error between the SC generated by the code and the measured reference for operation in saturation regime and above threshold voltage, for both the I-V curves and their derivatives. This method is then valid for the assessment of the SC structures in new technologies, avoiding experimental dedicated layouts or complex set-ups.

scholarly journals Measurement of the Current-Voltage Curve of Photovoltaic Cells Based on a DAQ and Python

2018 ◽  
Vol 1 ◽  
pp. 94-98
Author(s):  
Israel Reyes-Ramírez ◽  
◽  
Jorge Fonseca-Campos ◽  
Juan Luis Mata Machuca
Keyword(s):  
Photovoltaic Cells ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

Ab Initio Study of the Sub-threshold Electron Transport Properties of Ultra-scaled Amorphous Phase Change Material Germanium Telluride

2014 ◽  
Vol 1697 ◽  
Author(s):  
Jie Liu ◽  
Xu Xu ◽  
M. P. Anantram
Keyword(s):  
Electron Transport ◽  
Ab Initio ◽  
Transport Properties ◽  
Defect States ◽  
Germanium Telluride ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Electron Transport Properties ◽  
Change Material

ABSTRACTThe sub-threshold electron transport properties of amorphous (a-) germanium telluride (GeTe) phase change material (PCM) ultra-thin films are investigated by using ab initio molecular dynamics, density function theory, and Green’s function simulations. The simulation results reproduce the trends in measured electron transport properties, e.g. current-voltage curve, intra-bandgap donor-like and acceptor-like defect states, and p-type conductivity. The underlying physical mechanism of electron transport in ultra-scaled a-PCM is unraveled. We find that, though the current-voltage curve of the ultra-scaled a-PCM resembles that of the bulk a-PCM, their physical origins are different. Unlike the electron transport in bulk a-PCM, which is governed by the Poole-Frenkel effect, the electron transport in ultra-scaled a-PCM is largely dominated by tunneling transport via intra-bandgap donor-like and acceptor-like defect states.

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