CVD nanodiamond thin films as high yield photocathodes driven by UV laser pulses

Author(s):  
Jean-Paul Mazellier ◽  
Cyril Di Giola ◽  
Pierre Legagneux ◽  
Clement Hebert ◽  
Emmanuel Scorsonne ◽  
...  
Keyword(s):  
1995 ◽  
Vol 397 ◽  
Author(s):  
Yo Ichikawa ◽  
Hideaki Ada Chi ◽  
Kentaro Setsune ◽  
Syun-Ichiro Kawashima ◽  
Koichi Kugimiya

ABSTRACTEffects of ultraviolet (UV) laser irradiation on the local crystal structure have been investigated for amorphous Ti-O thin films sputtered on ST-cut quartz substrates. The irradiation was conducted with a pulsed KrF excimer laser of 248nm in wavelength. There were few changes in the optical transmission spectra of the films before and after the irradiation. The crystal structure of the films was characterized by electron diffraction, XPS and EXAFS analyses. The results obtained from these analyses suggest the films gradually crystallize to a TiO2 crystal with the rutile type structure by the increasing of the laser pulses.


2013 ◽  
Vol 543 ◽  
pp. 381-384 ◽  
Author(s):  
Manabu Kanno ◽  
Hirohiko Koho ◽  
Hirobumi Mineo ◽  
Sheng Hsien Lin ◽  
Yuichi Fujimura

In recent years, laser control of electrons in molecular system and condensed matter has attracted considerable attention with rapid progress in laser science and technology [. In particular, control of π-electron rotation in photo-induced chiral aromatic molecules has potential utility to the next-generation ultrafast switching devices. In this paper, we present a fundamental principle of generation of ultrafast coherent ring currents and the control in photo-induced aromatic molecules. This is based on quantum dynamics simulations of π-electron rotations and preparation of unidirectional angular momentum by ultrashort UV laser pulses properly designed. For this purpose, we adopt 2,5-dichloro [(3,6) pyrazinophane (DCPH) fixed on a surface, which is a real chiral aromatic molecule with plane chirality. Here π electrons can be rotated along the aromatic ring clockwise or counterclockwise by irradiation of a linearly polarized laser pulse with the properly designed photon polarization direction and the coherent ring current with the definite direction along the aromatic ring is prepared. This is contrast to ordinary ring current in an achiral aromatic ring molecule with degenerate electronic excited state, which is prepared by a circularly polarized laser [2]. In this case, π electrons rotate along the Z-axis of the laboratory coordinates, while for the present case electrons rotate along the z-axis in molecular Cartesian coordinates. It should be noted that signals originated from the coherent ring currents prepared by linearly polarized ultrashort UV lasers are specific to the chiral molecule of interest.


2000 ◽  
Vol 154-155 ◽  
pp. 393-398 ◽  
Author(s):  
A Crunteanu ◽  
M Charbonnier ◽  
M Romand ◽  
R Alexandrescu
Keyword(s):  

2006 ◽  
Vol 90 (20) ◽  
pp. 3624-3632 ◽  
Author(s):  
A. Tverjanovich ◽  
E.N. Borisov ◽  
E.S. Vasilieva ◽  
O.V. Tolochko ◽  
I.E. Vahhi ◽  
...  
Keyword(s):  

1992 ◽  
Vol 285 ◽  
Author(s):  
W.W. Duley ◽  
G. Kinsman

ABSTRACTExcimer laser radiation may be used to process metal surfaces in a variety of novel ways. The simplest of these involves the use of UV laser pulses for ablation. Ablation occurs as the result of both vaporization and hydrodynamical effects. Experimental data related to these processes will be discussed. In addition, it will be shown how specific irradiation regimes can yield metal surfaces with unique radiative properties.


2015 ◽  
Vol 73 (3) ◽  
pp. 637-648 ◽  
Author(s):  
Francesco Itri ◽  
Daria M. Monti ◽  
Bartolomeo Della Ventura ◽  
Roberto Vinciguerra ◽  
Marco Chino ◽  
...  

1989 ◽  
Vol 169 ◽  
Author(s):  
C. B. Lee ◽  
R. K. Singh ◽  
S. Sharan ◽  
A. K. Singh ◽  
P. Tiwari ◽  
...  

AbstractWe report in‐situ fabrication of c‐axis textured YBa2Cu3O7‐x superconducting thin films with Tco > 77K on unbuffered silicon substrates by the biased pulsed laser evaporation (PLE) technique in the temperature range of 550‐650°C. At substrate temperatures below 550°C, no c‐axis texturing of the superconducting film was observed. The YBa2Cu3O7‐x superconducting films were fabricated by ablating a bulk YBa2Cu3O7 target by a XeCl excimer laser (λ = 308 nm, τ = 45 × 10‐9 sec) in a chamber maintained at an oxygen pressure of 0.2 torr . The thickness of the films was varied from 0.3 to 0.5 nm depending on the number of laser pulses. Extensive diffusion was observed in thin films deposited at substrate temperatures above 550°C. However, microstructurally, with increase in the substrate temperature the films exhibited larger grain size and greater degree of c‐axis texturing (measured by the ratio of the (005) and (110) X‐ray diffraction peaks). This was found to give rise to better superconducting properties with Tco exceeding 77 K for YBa2Cu3O7‐x films deposited on Si substrates at 650°C.


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