Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

2004 ◽  
Author(s):  
Y.C. Kong ◽  
Y.D. Zheng ◽  
C.H. Zhou ◽  
Y.Z. Deng ◽  
S.L. Gu ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Density ◽  
Double Heterostructure ◽  
Al Content ◽  
Dimensional Electron Gas ◽  
High Al Content

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

2008 ◽  
Vol 103 (9) ◽  
pp. 093714 ◽  
Author(s):  
M. Gonschorek ◽  
J.-F. Carlin ◽  
E. Feltin ◽  
M. A. Py ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Density ◽  
Dimensional Electron Gas

Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

1999 ◽  
Vol 595 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Double Heterostructure ◽  
Gas Transport Properties ◽  
Double Heterostructures ◽  
Dimensional Electron Gas

Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN doubleheterostructure, compared with that in the conventional AlGaN/GaN singleheterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation of an AlGaN/GaN/AlGaN double-heterostructure field effect transistor has been demonstrated: a maximum transconductance of 180 mS/mm has been obtained for a 0.4 mm-gate-length device. In the double-heterostructure using InGaN channel, the increased capacity for the two-dimensional electron gas has been observed. The AlGaN/(In)GaN/AlGaN double-heterostructures are effective for improving the electron transport properties.

scholarly journals Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s

2018 ◽  
Vol 8 (2) ◽  
pp. 954 ◽  
Author(s):  
Asmae Babaya ◽  
Bri Seddik ◽  
Saadi Adil
Keyword(s):  
Electron Gas ◽  
Voltage Characteristic ◽  
Two Dimensional ◽  
Algan Layer ◽  
Dimensional Electron ◽  
Current Voltage Characteristic ◽  
Two Dimensional Electron Gas ◽  
Gas Density ◽  
Current Voltage ◽  
Dimensional Electron Gas

This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the two-dimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.

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