Simulation of Ge/(Si)GeSn hetero-junction tunnel FETs with suppressed ambipolar current

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330307 ◽

2018 ◽

Author(s):

Yongwang Zhang ◽

Suyuan Wang ◽

Jun Zheng ◽

Chunlai Xue ◽

Chuanbo Li ◽

...

Keyword(s):

Ambipolar Current ◽

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Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect

Journal of Computational Electronics ◽

10.1007/s10825-020-01484-8 ◽

2020 ◽

Vol 19 (2) ◽

pp. 658-667 ◽

Author(s):

Tripuresh Joshi ◽

Balraj Singh ◽

Yashvir Singh

Keyword(s):

Bias Effect ◽

Ambipolar Current ◽

Tunnel Fets ◽

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Controlling the Drain Side Tunneling Width to Reduce Ambipolar Current in Tunnel FETs Using Heterodielectric BOX

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2478955 ◽

2015 ◽

Vol 62 (11) ◽

pp. 3882-3886 ◽

Author(s):

Shubham Sahay ◽

Mamidala Jagadesh Kumar

Keyword(s):

Ambipolar Current ◽

Tunnel Fets ◽

Tunneling Width

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Hetero-gate Dielectric with Hetero Dielectric BOX for Suppressing Ambipolar Current in Tunnel FETs

2020 International Conference on Intelligent Engineering and Management (ICIEM) ◽

10.1109/iciem48762.2020.9160161 ◽

2020 ◽

Author(s):

Irfan Ahmad Pindoo ◽

Sanjeet K. Sinha

Keyword(s):

Gate Dielectric ◽

Ambipolar Current ◽

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Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.11.002 ◽

2018 ◽

Vol 113 ◽

pp. 261-270 ◽

Author(s):

Shelly Garg ◽

Sneh Saurabh

Keyword(s):

Ambipolar Current ◽

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An analysis on the ambipolar current in Si double-gate tunnel FETs

Solid-State Electronics ◽

10.1016/j.sse.2011.11.009 ◽

2012 ◽

Vol 70 ◽

pp. 67-72 ◽

Author(s):

Hraziia ◽

Andrei Vladimirescu ◽

Amara Amara ◽

Costin Anghel

Keyword(s):

Double Gate ◽

Ambipolar Current ◽

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Influence of Gate and Channel Engineering on Multigate Tunnel FETs: A Review

Computational Advancement in Communication Circuits and Systems - Lecture Notes in Electrical Engineering ◽

10.1007/978-981-13-8687-9_31 ◽

2019 ◽

pp. 345-355 ◽

Author(s):

Ritam Dutta ◽

Sukumar Chandra Konar ◽

Nitai Paitya

Keyword(s):

Channel Engineering ◽

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A methodical survey on present state of art for electrostatically-doped tunnel FETs and its future prospects

Materials Today Proceedings ◽

10.1016/j.matpr.2021.01.963 ◽

2021 ◽

Author(s):

Preeti Sharma ◽

Jaya Madan ◽

Rahul Pandey ◽

Rajnish Sharma

Keyword(s):

Present State ◽

Future Prospects ◽

Tunnel Fets ◽

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Perspectives on Dielectric Modulated Biosensing in Silicon Tunnel FETs

Silicon ◽

10.1007/s12633-021-00945-4 ◽

2021 ◽

Author(s):

Manan Mehta ◽

Rupam Goswami

Keyword(s):

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Investigation of Variability in Device Design on Saturation Characteristics of Nanowire Tunnel FETs

Silicon ◽

10.1007/s12633-021-01183-4 ◽

2021 ◽

Author(s):

Abhishek Acharya

Keyword(s):

Device Design ◽

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Device-design optimization of ferroelectric-gated vertical tunnel field-effect transistor to suppress ambipolar current

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab8e63 ◽

2020 ◽

Vol 35 (8) ◽

pp. 085010

Author(s):

Taehwan Jung ◽

Changhwan Shin

Keyword(s):

Design Optimization ◽

Field Effect ◽

Field Effect Transistor ◽

Device Design ◽

Effect Transistor ◽

Ambipolar Current ◽

Tunnel Field Effect Transistor

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