An analysis on the ambipolar current in Si double-gate tunnel FETs

Solid-State Electronics ◽

10.1016/j.sse.2011.11.009 ◽

2012 ◽

Vol 70 ◽

pp. 67-72 ◽

Author(s):

Hraziia ◽

Andrei Vladimirescu ◽

Amara Amara ◽

Costin Anghel

Keyword(s):

Double Gate ◽

Ambipolar Current ◽

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Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect

Journal of Computational Electronics ◽

10.1007/s10825-020-01484-8 ◽

2020 ◽

Vol 19 (2) ◽

pp. 658-667 ◽

Author(s):

Tripuresh Joshi ◽

Balraj Singh ◽

Yashvir Singh

Keyword(s):

Bias Effect ◽

Ambipolar Current ◽

Tunnel Fets ◽

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Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

2018 3rd International Conference for Convergence in Technology (I2CT) ◽

10.1109/i2ct.2018.8529418 ◽

2018 ◽

Author(s):

Sanjay Kumar ◽

Kamlaksha Baral ◽

Sweta Chander ◽

P. K. Singh ◽

Kunal Singh ◽

...

Keyword(s):

Drain Current ◽

Double Gate ◽

Interface Charges ◽

Tunnel Fets ◽

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Performance of asymmetric gate oxide on gate-drain overlap in Si and Si1−xGex double gate tunnel FETs

2016 International Conference on VLSI Systems, Architectures, Technology and Applications (VLSI-SATA) ◽

10.1109/vlsi-sata.2016.7593036 ◽

2016 ◽

Author(s):

S. Poorvasha ◽

B. Lakshmi

Keyword(s):

Double Gate ◽

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Dual-Metal Graded-Channel Double-Gate Tunnel FETs for Reduction of Ambipolar Conduction

2018 IEEE Electron Devices Kolkata Conference (EDKCON) ◽

10.1109/edkcon.2018.8770449 ◽

2018 ◽

Author(s):

Chandan K. Pandey ◽

Saurabh Chaudhury

Keyword(s):

Double Gate ◽

Tunnel Fets ◽

Ambipolar Conduction

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Double-gate Ge, In As-based tunnel FETs with enhanced ON-current

2016 International Conference on Communication and Signal Processing (ICCSP) ◽

10.1109/iccsp.2016.7754219 ◽

2016 ◽

Author(s):

Chebrolu Gopi ◽

Sudakar Singh Chauhan

Keyword(s):

Double Gate ◽

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Circuit speed oriented device design scheme for GaAsSb/InGaAs double-gate hetero-junction tunnel FETs

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab6569 ◽

2020 ◽

Vol 59 (SG) ◽

pp. SGGA06

Author(s):

Koichi Fukuda ◽

Naoya Nogami ◽

Shogo Kunisada ◽

Yasuyuki Miyamoto

Keyword(s):

Double Gate ◽

Device Design ◽

Design Scheme ◽

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Investigation of geometrical and doping parameter variations on GaSb/Si‐based double gate tunnel FETs: A qualitative and quantitative approach for RF performance enhancement

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2633 ◽

2019 ◽

Vol 32 (6) ◽

Author(s):

Poorvasha Shanmuganathan ◽

Lakshmi Balasubramanian

Keyword(s):

Performance Enhancement ◽

Quantitative Approach ◽

Double Gate ◽

Qualitative And Quantitative ◽

Parameter Variations ◽

Tunnel Fets ◽

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Compact modeling of intrinsic capacitances in Double-Gate Tunnel-FETs

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2017.7962584 ◽

2017 ◽

Author(s):

A. Farokhnejad ◽

M. Graef ◽

F. Horst ◽

C. Liu ◽

Q.T. Zhao ◽

...

Keyword(s):

Compact Modeling ◽

Double Gate ◽

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Implementing Logic Functions Using Independently-Controlled Gate in Double-Gate Tunnel FETs: Investigation and Analysis

IEEE Access ◽

10.1109/access.2019.2936610 ◽

2019 ◽

Vol 7 ◽

pp. 117591-117599 ◽

Author(s):

Shelly Garg ◽

Sneh Saurabh

Keyword(s):

Double Gate ◽

Tunnel Fets ◽

Logic Functions

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Two-dimensional bias dependent model for the screening length in double-gate Tunnel-FETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523483 ◽

2013 ◽

Author(s):

M. Graef ◽

M. Schwarz ◽

T. Holtij ◽

F. Hain ◽

A. Kloes ◽

...

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Screening Length ◽

Dependent Model ◽

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