Substrate Cleaning Methods for Fabricating OLEDs and Its Effect on Current Leakage Defect Formation

2009 ◽  
Vol 5 (4) ◽  
pp. 126-132 ◽  
Author(s):  
Masaru Nagai
Keyword(s):  
Defect Formation ◽  
Current Leakage ◽  
Cleaning Methods ◽  
Substrate Cleaning

Defect reduction in SiC epilayers by different substrate cleaning methods

2022 ◽  
Vol 140 ◽  
pp. 106414
Author(s):  
D. Baierhofer ◽  
B. Thomas ◽  
F. Staiger ◽  
B. Marchetti ◽  
C. Förster ◽  
...  
Keyword(s):  
Defect Reduction ◽  
Cleaning Methods ◽  
Substrate Cleaning

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

Defect formation in solids by decay of electronic excitations

1985 ◽  
Vol 147 (11) ◽  
pp. 523 ◽  
Author(s):  
M.I. Klinger ◽  
Ch.B. Lushchik ◽  
T.V. Mashovets ◽  
G.A. Kholodar' ◽  
M.K. Sheinkman ◽  
...  
Keyword(s):  
Defect Formation ◽  
Electronic Excitations

INFLUENCE OF THE LOCATION OF THE BASEBOARD JUMPER FOR FIRMWARE FOR DEFECT FORMATION IN CHAIN DRIVE SPROCKET FORGING

2020 ◽  
Author(s):  
I.A. Tserna ◽  
◽  
V.V. Bukhov ◽  
Keyword(s):  
Computer Simulation ◽  
Defect Formation ◽  
Chain Drive ◽  
Combine Harvester

The paper presents the results of computer simulation of the process of de-formationforged chain wheels, combine harvester; the influence of the placement of the jumper outline for firmware on the processes of defect formation in forging.

Solutocapillary-convection-driven macrovoid defect formation in polymeric membranes

2001 ◽  
Author(s):  
J. Zartman ◽  
V. Khare ◽  
A. Greenberg ◽  
M. Pekny ◽  
P. Todd ◽  
...  
Keyword(s):  
Defect Formation ◽  
Polymeric Membranes

Reasons for the formation of crack-like defects in 09Г2С heavy plate steel for tank steel structures

2020 ◽  
Vol 10 (5) ◽  
pp. 479-489
Author(s):  
Vitaly М. Goritsky ◽  
◽  
Georgy R. Shneyderov ◽  
Eugeny P. Studenov ◽  
Olga A. Zadubrovskaya ◽  
...  
Keyword(s):  
Impact Toughness ◽  
Defect Formation ◽  
Steel Structures ◽  
Controlled Rolling ◽  
Plate Steel ◽  
Heavy Plate ◽  
Oil Storage ◽  
Magnetic Inspection ◽  
Metal Microstructure

Determination of causes of crack-like defects in the heavy plate steel 09Г2С is a crucial task, the solution of which is aimed at improving the mechanical safety of oil storage steel vertical tanks. In order to determine the causes for the formation of a group of crack-like defects oriented towards rolling, revealed during grinding and magnetic inspection of the tank wall surface near the vertical weld, the analysis of the chemical composition and testing of the mechanical properties of heavy plate steel were carried out, including the determination of the anisotropy of impact toughness in the temperature range from +20 to –75 °С, analysis of metal microstructure in the area of defect formation on transversal sections and rolled surface. Impact bending tests of 09Г2С heavy plate steel after controlled rolling in longitudinal and transverse directions showed no anisotropy of impact toughness, as well as high purity of steel as for sulfur and titanium, which at higher content causes impact toughness anisotropy. The revealed features of metal microstructure near the defects made it possible to conclude that the crack-like defects were formed during the rolling of gas bubbles at the stage of preparing semi-finished rolled products for finishing rolling. One of the possible methods to prevent such defects from getting into finished rolled products is the use of automated systems of visual inspection of rolled products in the manufacturing process.

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Degradation Analysis of Thick Film Chip Resistors

2009 ◽  
Author(s):  
Bhanu Sood ◽  
Diganta Das ◽  
Michael H. Azarian ◽  
Michael Pecht
Keyword(s):  
Thick Film ◽  
Printed Circuit Board ◽  
Negative Resistance ◽  
Circuit Board ◽  
High Humidity ◽  
Circuit Boards ◽  
Chemical Modifications ◽  
Current Leakage ◽  
Printed Circuit ◽  
Degradation Analysis

Abstract Negative resistance drift in thick film chip resistors in high temperature and high humidity application conditions was investigated. This paper reports on the investigation of possible causes including formation of current leakage paths on the printed circuit board, delamination between the resistor protective coating and laser trim, and the possibility of silver migration or copper dendrite formation. Analysis was performed on a set of circuit boards exhibiting failures due to this phenomenon. Electrical tests after mechanical and chemical modifications showed that the drift was most likely caused by moisture ingress that created a conductive path across the laser trim.

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