Improved performance of InGaZnO thin-film transistor with Ti incorporation into La2O3 gate dielectric
2014 ◽
Vol 14
(4)
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pp. 1056-1060
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Keyword(s):
2014 ◽
Vol 61
(7)
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pp. 2398-2403
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2018 ◽
Vol 18
(3)
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pp. 333-336
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Keyword(s):
2014 ◽
Vol 14
(1)
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pp. 177-181
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2015 ◽
Vol 62
(7)
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pp. 2313-2319
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Keyword(s):
2019 ◽
Vol 123
(33)
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pp. 20278-20286
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Keyword(s):
2009 ◽
Vol 53
(6)
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pp. 621-625
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2009 ◽
Vol 24
(5)
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pp. 055008
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Keyword(s):
2013 ◽
Vol 13
(5)
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pp. 3313-3316
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