Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-load Current Stress

Author(s):  
Hengyu Yu ◽  
Shiwei Liang ◽  
Jun Wang ◽  
Xi Jiang ◽  
Bo Wang ◽  
...  
Keyword(s):  
2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.


2016 ◽  
Vol E99.C (1) ◽  
pp. 143-146
Author(s):  
Roger Yubtzuan CHEN ◽  
Zong-Yi YANG ◽  
Hongchin LIN

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.


Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1448
Author(s):  
Nam-Gyu Lim ◽  
Jae-Yeol Kim ◽  
Seongjun Lee

Battery applications, such as electric vehicles, electric propulsion ships, and energy storage systems, are developing rapidly, and battery management issues are gaining attention. In this application field, a battery system with a high capacity and high power in which numerous battery cells are connected in series and parallel is used. Therefore, research on a battery management system (BMS) to which various algorithms are applied for efficient use and safe operation of batteries is being conducted. In general, maintenance/replacement of multi-series/multiple parallel battery systems is only possible when there is no load current, or the entire system is shut down. However, if the circulating current generated by the voltage difference between the newly added battery and the existing battery pack is less than the allowable current of the system, the new battery can be connected while the system is running, which is called hot swapping. The circulating current generated during the hot-swap operation is determined by the battery’s state of charge (SOC), the parallel configuration of the battery system, temperature, aging, operating point, and differences in the load current. Therefore, since there is a limit to formulating a circulating current that changes in size according to these various conditions, this paper presents a circulating current estimation method, using an artificial neural network (ANN). The ANN model for estimating the hot-swap circulating current is designed for a 1S4P lithium battery pack system, consisting of one series and four parallel cells. The circulating current of the ANN model proposed in this paper is experimentally verified to be able to estimate the actual value within a 6% error range.


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