Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy

2011 ◽  
Vol 20 (6) ◽  
pp. 1395-1418 ◽  
Author(s):  
Usama Zaghloul ◽  
George J. Papaioannou ◽  
Bharat Bhushan ◽  
Haixia Wang ◽  
Fabio Coccetti ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Rf Power ◽  
Force Microscopy ◽  
Silicon Nitride Films ◽  
Atomic Force ◽  
Gas Ratio

Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

1996 ◽  
Vol 424 ◽  
Author(s):  
H. Meiling ◽  
E. Ten Grotenhuis ◽  
W. F. van der Weg ◽  
J. J. Hautala ◽  
J. F. M. Westendorp
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Gas Composition ◽  
Rf Power ◽  
Bulk Properties ◽  
Force Microscopy ◽  
Hydrogen Dilution ◽  
Atomic Force ◽  
Deposition Conditions

AbstractThe surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.

Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Meiling ◽  
E. Ten Grotenhuis ◽  
W. F. Van Der Weg ◽  
J. J. Hautala ◽  
J. F. M. Westendorp
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Gas Composition ◽  
Rf Power ◽  
Bulk Properties ◽  
Force Microscopy ◽  
Hydrogen Dilution ◽  
Atomic Force ◽  
Deposition Conditions

AbstractThe surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.

A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

2004 ◽  
Vol 815 ◽  
Author(s):  
S. Rao ◽  
S.E. Saddow ◽  
F. Bergamini ◽  
R. Nipoti ◽  
Y. Emirov ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Secondary Electron ◽  
High Dose ◽  
Rf Power ◽  
Plan View ◽  
Force Microscopy ◽  
Atomic Force ◽  
Process Pressure ◽  
Robust Process

AbstractHigh-dose Al implants in n-type epitaxial layers have been successfully annealed at 1600°C without any evidence of step bunching. Anneals were conducted in a silane ambient and at a process pressure of 150 Torr. Silane, 3% premixed in 97% UHP Ar, was further diluted in a 6 slm Ar carrier gas and introduced into a CVD reactor where the sample was heated via RF induction. A 30 minute anneal was performed followed by a purge in Ar at which time the RF power was switched off. The samples were then studied via plan-view secondary electron microscopy (SEM) and atomic force microscopy (AFM). The resulting surface morphology was step- free and flat.

Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

2000 ◽  
Vol 154-155 ◽  
pp. 337-344 ◽  
Author(s):  
J. Flicstein ◽  
E. Guillonneau ◽  
J. Marquez ◽  
L.S. How Kee Chun ◽  
D. Maisonneuve ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Comparative Study ◽  
Force Microscopy ◽  
Atomic Force

A Robust LPCVD Nitride Integrated Process for High Density Non-Volatile Eprom Memories

1993 ◽  
Vol 303 ◽  
Author(s):  
R. B. Sethi ◽  
R. P. Ciari ◽  
L. Anderson ◽  
U. S. Kim ◽  
A. Bergemont
Keyword(s):  
Silicon Carbide ◽  
Atomic Force Microscopy ◽  
Memory Cell ◽  
High Density ◽  
Optical Methods ◽  
Integrated Process ◽  
Force Microscopy ◽  
Atomic Force ◽  
Key Features ◽  
Gas Ratio

ABSTRACTA robust 6" hotwall flatzone nitride system is developed for scaled ONO interpoly. dielectric application in a high density EPROM memory cell. This system is designed to operate at low temperature (660° C) and gas ratio (4:1 NH3: DCS) with integrated silicon carbide components. The obtained key features are low defects (0.25 #/cm2 particles), smooth topography (measured by atomic force microscopy) and superior electrical interface as measured by electrical and optical methods.

Roughness evolution of high-rate deposited a-SiNx:H films studied by atomic force microscopy and real time spectroscopic ellipsometry

2004 ◽  
Vol 808 ◽  
Author(s):  
P.J. van den Oever ◽  
M.C.M. van de Sanden ◽  
W.M.M. Kessels
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Mass Density ◽  
High Rate ◽  
Growth Exponent ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Exponent

ABSTRACTThe scaling behavior of the roughness evolution of silicon nitride (a-SiNx:H) films with different mass densities (deposited from SiH4-N2-H2 and SiH4-NH3 based plasmas) has been investigated by atomic force microscopy and real time spectroscopic ellipsometry. The observed roughness exponent a is similar for both films, whereas the growth exponent b is a factor of two smaller for the higher density films. The relation between the lower value of b and the higher mass density is discussed.

Single asperity tribochemical wear of silicon nitride studied by atomic force microscopy

2002 ◽  
Vol 92 (9) ◽  
pp. 5103-5109 ◽  
Author(s):  
W. Maw ◽  
F. Stevens ◽  
S. C. Langford ◽  
J. T. Dickinson
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Force Microscopy ◽  
Single Asperity ◽  
Atomic Force
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