Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Meiling ◽  
E. Ten Grotenhuis ◽  
W. F. Van Der Weg ◽  
J. J. Hautala ◽  
J. F. M. Westendorp
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Gas Composition ◽  
Rf Power ◽  
Bulk Properties ◽  
Force Microscopy ◽  
Hydrogen Dilution ◽  
Atomic Force ◽  
Deposition Conditions

AbstractThe surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.

Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

1996 ◽  
Vol 424 ◽  
Author(s):  
H. Meiling ◽  
E. Ten Grotenhuis ◽  
W. F. van der Weg ◽  
J. J. Hautala ◽  
J. F. M. Westendorp
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Gas Composition ◽  
Rf Power ◽  
Bulk Properties ◽  
Force Microscopy ◽  
Hydrogen Dilution ◽  
Atomic Force ◽  
Deposition Conditions

AbstractThe surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.

Correlation of Roughness, Impurity, Infra-Red Emissivity and Sputter Conditions for Aluminium Films

1994 ◽  
Vol 354 ◽  
Author(s):  
C.H. Wang ◽  
W.C. Shih ◽  
R.E. Somekh ◽  
J.E. Evetts ◽  
D. Jackson
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Film Thickness ◽  
Impurity Level ◽  
General Context ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preliminary Work ◽  
Infra Red ◽  
Deposition Conditions

AbstractWe report the results of a study of IR emissivity of aluminium films as a function of impurity level, film thickness and sputtering conditions. Preliminary work suggests that for a given level of film impurities and deposition conditions, the JJR emissivity can be minimized with a certain film thickness. The influence of impurity level, film thickness, and sputter pressure on IR emissivity has been correlated with the resistivity and the surface roughness (measured by atomic force microscopy). The results are discussed in the general context of the Drude theory with allowances for the observed roughness.

Brittle Behaviour in Aspirin Crystals: Evidence of Spalling Fracture

2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Spalling Fracture ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>

Brittle Behaviour in Aspirin Crystals: Evidence of Spalling Fracture

2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Spalling Fracture ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>

scholarly journals Atomic force microscopy comparative analysis of the surface roughness of two posterior chamber phakic intraocular lens models: ICL versus IPCL

2021 ◽  
Vol 21 (1) ◽  
Author(s):  
Juan Gros-Otero ◽  
Samira Ketabi ◽  
Rafael Cañones-Zafra ◽  
Montserrat Garcia-Gonzalez ◽  
Cesar Villa-Collar ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Intraocular Lenses ◽  
Posterior Chamber ◽  
Anterior Surface ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Phakic Intraocular Lenses ◽  
Roughness Measurements

Abstract Background To compare the anterior surface roughness of two commercially available posterior chamber phakic intraocular lenses (IOLs) using atomic force microscopy (AFM). Methods Four phakic IOLs were used for this prospective, experimental study: two Visian ICL EVO+ V5 lenses and two iPCL 2.0 lenses. All of them were brand new, were not previously implanted in humans, were monofocal and had a dioptric power of − 12 diopters (D). The anterior surface roughness was assessed using a JPK NanoWizard II® atomic force microscope in contact mode immersed in liquid. Olympus OMCL-RC800PSA commercial silicon nitride cantilever tips were used. Anterior surface roughness measurements were made in 7 areas of 10 × 10 μm at 512 × 512 point resolution. The roughness was measured using the root-mean-square (RMS) value within the given regions. Results The mean of all anterior surface roughness measurements was 6.09 ± 1.33 nm (nm) in the Visian ICL EVO+ V5 and 3.49 ± 0.41 nm in the iPCL 2.0 (p = 0.001). Conclusion In the current study, we found a statistically significant smoother anterior surface in the iPCL 2.0 phakic intraocular lenses compared with the VISIAN ICL EVO+ V5 lenses when studied with atomic force microscopy.

A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

2004 ◽  
Vol 815 ◽  
Author(s):  
S. Rao ◽  
S.E. Saddow ◽  
F. Bergamini ◽  
R. Nipoti ◽  
Y. Emirov ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Secondary Electron ◽  
High Dose ◽  
Rf Power ◽  
Plan View ◽  
Force Microscopy ◽  
Atomic Force ◽  
Process Pressure ◽  
Robust Process

AbstractHigh-dose Al implants in n-type epitaxial layers have been successfully annealed at 1600°C without any evidence of step bunching. Anneals were conducted in a silane ambient and at a process pressure of 150 Torr. Silane, 3% premixed in 97% UHP Ar, was further diluted in a 6 slm Ar carrier gas and introduced into a CVD reactor where the sample was heated via RF induction. A 30 minute anneal was performed followed by a purge in Ar at which time the RF power was switched off. The samples were then studied via plan-view secondary electron microscopy (SEM) and atomic force microscopy (AFM). The resulting surface morphology was step- free and flat.

Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

1996 ◽  
Vol 428 ◽  
Author(s):  
G. O. Ramseyer ◽  
L. H. Walsh ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
R. C. Lacoe ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Copper Diffusion ◽  
Force Microscopy ◽  
Atomic Force ◽  
Line Widths ◽  
Electromigration Lifetime

AbstractPatterned 930 nm Al(1%-Si) interconnects over 147 nm of Cu were electromigration lifetime tested at 1.0–1.5 × 105 A/cm2 at 250 °C. The morphology of the surfaces of the electromigrated stripes with different line widths and times to failure were characterized by atomic force microscopy, and changes in surface roughness were compared. The diffusion of copper into the electromigrated aluminum stripes was determined by depth profiling using Auger electron spectroscopy. In particular, areas where hillocks formed were examined and compared to areas of median roughness.

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