Current Sensing-Assisted Active Pixel Sensor for High-Speed CMOS Image Sensors

2015 ◽  
Vol 15 (8) ◽  
pp. 4365-4372
Author(s):  
Swetha S. George ◽  
Mark F. Bocko ◽  
Zeljko Ignjatovic
2015 ◽  
Vol 24 (04) ◽  
pp. 1550054 ◽  
Author(s):  
Jiangtao Xu ◽  
Jing Yu ◽  
Fujun Huang ◽  
Kaiming Nie

This paper presents a 10-bit column-parallel single slope analog-to-digital converter (SS ADC) with a two-step time-to-digital converter (TDC) to overcome the long conversion time problem in conventional SS ADC for high-speed CMOS image sensors (CIS). The time interval proportional to the input signal is generated by a ramp generator and a comparator, which is digitized by a two-step TDC consisting of coarse and fine conversions to achieve a high-precision time-interval measurement. To mitigate the impact of propagation delay mismatch, a calibration circuit is also proposed to calibrate the delay skew within -T/2 to T/2. The proposed ADC is designed in 0.18 μm CMOS process. The power dissipation of each column circuit is 232 μW at supply voltages of 3.3 V for the analog circuits and 1.8 V for the digital blocks. The post simulation results indicate that the ADC achieves a SNDR of 60.89 dB (9.82 ENOB) and a SFDR of 79.98 dB at a conversion rate of 2 MS/s after calibration, while the SNDR and SFDR are limited to 41.52 dB and 67.64 dB, respectively before calibration. The differential nonlinearity (DNL) and integral nonlinearity (INL) without calibration are +15.80/-15.29 LSB and +1.68/-15.34 LSB while they are reduced down to +0.75/-0.25 LSB and +0.76/-0.78 LSB with the proposed calibration.


2014 ◽  
Vol 35 (10) ◽  
pp. 105008
Author(s):  
Quanliang Li ◽  
Liyuan Liu ◽  
Ye Han ◽  
Zhongxiang Cao ◽  
Nanjian Wu

2013 ◽  
Vol 58 (10) ◽  
pp. 3359-3375 ◽  
Author(s):  
Hafiz M Zin ◽  
Emma J Harris ◽  
John P F Osmond ◽  
Nigel M Allinson ◽  
Philip M Evans

2017 ◽  
Vol 2017 ◽  
pp. 1-15 ◽  
Author(s):  
Mostafa Chakir ◽  
Hicham Akhamal ◽  
Hassan Qjidaa

The CMOS Monolithic Active Pixel Sensor (MAPS) for the International Linear Collider (ILC) vertex detector (VXD) expresses stringent requirements on their analog readout electronics, specifically on the analog-to-digital converter (ADC). This paper concerns designing and optimizing a new architecture of a low power, high speed, and small-area 4-bit column-parallel ADC Flash. Later in this study, we propose to interpose an S/H block in the converter. This integration of S/H block increases the sensitiveness of the converter to the very small amplitude of the input signal from the sensor and provides a sufficient time to the converter to be able to code the input signal. This ADC is developed in 0.18 μm CMOS process with a pixel pitch of 35 μm. The proposed ADC responds to the constraints of power dissipation, size, and speed for the MAPS composed of a matrix of 64 rows and 48 columns where each column ADC covers a small area of 35 × 336.76 μm2. The proposed ADC consumes low power at a 1.8 V supply and 100 MS/s sampling rate with dynamic range of 125 mV. Its DNL and INL are 0.0812/−0.0787 LSB and 0.0811/−0.0787 LSB, respectively. Furthermore, this ADC achieves a high speed more than 5 GHz.


2019 ◽  
Vol 66 (6) ◽  
pp. 955-959
Author(s):  
C. R. Grace ◽  
T. Stezelberger ◽  
P. Denes

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