A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

2016 ◽  
Vol 51 (9) ◽  
pp. 2054-2065 ◽  
Author(s):  
Stefan Shopov ◽  
Andreea Balteanu ◽  
Juergen Hasch ◽  
Pascal Chevalier ◽  
Andreia Cathelin ◽  
...  
Keyword(s):  
Output Power ◽  
Signal Source ◽  
Sige Bicmos

A low-phase noise D-band signal source based on 130 nm SiGe BiCMOS and 0.15 µm AlGaN/GaN HEMT technologies

2019 ◽  
Vol 11 (5-6) ◽  
pp. 456-465
Author(s):  
Thanh Ngoc Thi Do ◽  
Mingquan Bao ◽  
Zhongxia Simon He ◽  
Ahmed Hassona ◽  
Dan Kuylenstierna ◽  
...  
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Communication Systems ◽  
Signal Source ◽  
Limiting Amplifier ◽  
Gan Hemt ◽  
Data Rates ◽  
Sige Bicmos ◽  
Low Phase Noise ◽  
Band Signal

AbstractThis paper reports on a record-low-phase noise D-band signal source with 5 dBm output power, and 1.3 GHz tuning range. The source is based on the unconventional combination of a fundamental frequency 23 GHz oscillator in 150 nm AlGaN/GaN HEMT technology followed by a 130 nm SiGe BiCMOS MMIC including a sixtupler and an amplifier. The amplifier operates in compression mode as power-limiting amplifier, to equalize the source output power so that it is nearly independent of the oscillator's gate and drain bias voltages used for tuning the frequency of the source. The choice of using a GaN HEMT oscillator is motivated by the need for a low oscillator noise floor, which recently has been demonstrated as a bottle-neck for data rates in wideband millimeter-wave communication systems. The phase noise performance of this signal source is −128 dBc/Hz at 10 MHz-offset. To the best of the authors’ knowledge, this result is the lowest reported phase noise of D-band signal source.

A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

2020 ◽  
Vol 63 (12) ◽  
Author(s):  
Peigen Zhou ◽  
Jixin Chen ◽  
Pinpin Yan ◽  
Zhigang Peng ◽  
Debin Hou ◽  
...  
Keyword(s):  
Output Power ◽  
Signal Source ◽  
Peak Output Power ◽  
Sige Bicmos ◽  
Bicmos Process

A 273.5–312-GHz Signal Source With 2.3 dBm Peak Output Power in a 130-nm SiGe BiCMOS Process

2020 ◽  
Vol 10 (3) ◽  
pp. 260-270
Author(s):  
Peigen Zhou ◽  
Jixin Chen ◽  
Pinpin Yan ◽  
Zhe Chen ◽  
Debin Hou ◽  
...  
Keyword(s):  
Output Power ◽  
Signal Source ◽  
Peak Output Power ◽  
Sige Bicmos ◽  
Bicmos Process

scholarly journals W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

2019 ◽  
Vol 30 ◽  
pp. 01006
Author(s):  
Alexander Kozhemyakin ◽  
Ivan Kravchenko
Keyword(s):  
Power Consumption ◽  
Output Power ◽  
Design Flow ◽  
Voltage Controlled Oscillator ◽  
Automotive Radar ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Fundamental Oscillation ◽  
Simulation Results

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.

A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT

2019 ◽  
Author(s):  
M. Hossain ◽  
N. Weimann ◽  
M. Brahem ◽  
O. Ostinelli ◽  
C. R. Bolognesi ◽  
...  
Keyword(s):  
Output Power ◽  
Signal Source ◽  
Peak Output Power

scholarly journals Analysis and Compensation of the AM-AM and AM-PM Distortion for CMOS Cascode Class-E Power Amplifier

2009 ◽  
Vol 2009 ◽  
pp. 1-9 ◽  
Author(s):  
Wen An Tsou ◽  
Wen Shen Wuen ◽  
Tzu Yi Yang ◽  
Kuei Ann Wen
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Signal Source ◽  
Nonlinear Capacitance ◽  
Power Added Efficiency ◽  
Equivalent Impedance ◽  
Common Gate ◽  
Class E

Analysis and compensation methodology of the AM-AM and AM-PM distortion of cascode class-E power amplifiers are presented. A physical-based model is proposed to illustrate that the nonlinear capacitance and transconductance cause the AM-AM and AM-PM distortion when modulating the supply voltage of the PA. A novel methodology that can reduce the distortion is also proposed. By degenerating common-gate transistor into a resistor, the constant equivalent impedance is obtained so that the AM-AM and AM-PM distortion is compensated. An experimental prototype of 2.6 GHz cascode class-E power amplifier with the AM-AM and AM-PM compensation has been integrated in a 0.18 μm CMOS technology, occupies a total die area of 1.6 mm2. It achieves a drain efficiency of 17.8% and a power-added efficiency of 16.6% while delivering 12 dBm of linear output power and drawing 31 mA from a 1.8 V supply. Finally, a co-simulation result demonstrated that, when the distortion of the PA has been compensated, the EVM is improved from −17 dB to −19 dB with an IEEE802.11a-like signal source.

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