Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

2011 ◽  
Vol 32 (7) ◽  
pp. 910-912 ◽  
Author(s):  
Jia Sun ◽  
Jie Jiang ◽  
Wei Dou ◽  
Bin Zhou ◽  
Qing Wan
2020 ◽  
Vol 20 (11) ◽  
pp. 6675-6678
Author(s):  
Donghyeon Lee ◽  
Pyungho Choi ◽  
Areum Park ◽  
Woojin Jeon ◽  
Donghee Choi ◽  
...  

In this study, we fabricated Hf-doped indium zinc oxide thin-film transistors (HIZO TFTs) using a solution process. Channel layers of the TFTs were optimized by varying the molar ratio of Hf in the channel layers. The electrical properties of the fabricated devices were compared to gallium indium zinc oxide (GIZO). HIZO TFTs showed 0.12 V threshold voltage, 0.45 V/decade subthreshold swing and 1.24 × 106 on–off current ratio, which were excellent compared to that of GIZO. In particular, when a positive gate bias stress of 10 V was applied for 103 s, the HIZO TFT exhibited a lower threshold voltage shift of 1.11 V than the GIZO TFT (1.88 V). These results originate from the higher oxygen bonding with Hf in IZO compared to Ga atoms. We confirmed that Hf acts as an excellent carrier suppressor whose properties exceed those of Ga.


1994 ◽  
Vol 41 (3) ◽  
pp. 458-460 ◽  
Author(s):  
J.C. Hsieh ◽  
Y.K. Fang ◽  
C.W. Chen ◽  
N.S. Tsai ◽  
M.S. Lin ◽  
...  

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