Highly Reliable a-IGZO TFT Gate Driver Circuit to Suppress Threshold Voltage Shift of Pull-down TFT

We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.

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IGZO TFT gate driver circuit with large threshold voltage margin

Displays ◽

10.1016/j.displa.2018.03.003 ◽

2018 ◽

Vol 53 ◽

pp. 1-7 ◽

Cited By ~ 10

Author(s):

Jin-Ho Kim ◽

Jongsu Oh ◽

KeeChan Park ◽

Yong-Sang Kim

Keyword(s):

Threshold Voltage ◽

Driver Circuit ◽

Gate Driver ◽

Igzo Tft

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Design of the Pixel and Row Driving Circuits Using IGZO TFT for QVGA AMOLED

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.380-384.3073 ◽

2013 ◽

Vol 380-384 ◽

pp. 3073-3076

Author(s):

Chun Cheng Yang ◽

Xin Chen ◽

Jian Zhang ◽

Chuan Nan Li

Keyword(s):

Threshold Voltage ◽

Circuit Simulation ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Driving Circuit ◽

Igzo Tft

An Amorphous IGZO (a-IGZO) TFTs pixel driving circuit and row driving circuit for AMOLED are proposed. The pixel driving circuit is composed of four a-IGZO TFTs and one capacitor (4T-1C), which effectively compensates the threshold-voltage-shift (ΔVth1V) of the drive TFT, and shift registers, NAND gates and inverters constitute the row driving circuit. To verify the effect of the proposed circuit, simulation using H-spice was performed, and results prove that the presented circuit can be applied to monochromatic 2-inches QVGA AMOLED.

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A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays

IEEE Electron Device Letters ◽

10.1109/led.2017.2699669 ◽

2017 ◽

Vol 38 (6) ◽

pp. 760-762 ◽

Cited By ~ 8

Author(s):

Woo-Sul Shin ◽

Hyun-A Ahn ◽

Jun-Seok Na ◽

Seong-Kwan Hong ◽

Oh-Kyong Kwon ◽

...

Keyword(s):

Threshold Voltage ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Pixel Circuit ◽

Igzo Tft

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Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260944 ◽

2020 ◽

Author(s):

Yi-Cheng Chen ◽

Shun-Wei Tang ◽

Pin-Hau Lin ◽

Zheng-Chen Chen ◽

Ming-Hao Lu ◽

...

Keyword(s):

Silicon Nitride ◽

Threshold Voltage ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Gan Hemts

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Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽

10.3390/mi12030327 ◽

2021 ◽

Vol 12 (3) ◽

pp. 327

Author(s):

Je-Hyuk Kim ◽

Jun Tae Jang ◽

Jong-Ho Bae ◽

Sung-Jin Choi ◽

Dong Myong Kim ◽

...

Keyword(s):

Thin Film ◽

Electric Field ◽

Oxygen Content ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Electron Trapping ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Drain Side ◽

Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

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