AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric
2013 ◽
Vol 34
(3)
◽
pp. 375-377
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2017 ◽
Vol 32
(18)
◽
pp. 3458-3468
◽
2013 ◽
Vol 52
(8S)
◽
pp. 08JN02
◽
2019 ◽
Vol 52
(48)
◽
pp. 485106
◽
2011 ◽
Vol 50
◽
pp. 110202
◽
2018 ◽
Vol 36
(4)
◽
pp. 041203
◽
2003 ◽
Vol 42
(Part 1, No. 4B)
◽
pp. 2278-2280
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