Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics

2017 ◽  
Vol 32 (18) ◽  
pp. 3458-3468 ◽  
Author(s):  
Jesús A. del Alamo ◽  
Alex Guo ◽  
Shireen Warnock
Keyword(s):  
Power Electronics ◽  
Electron Mobility ◽  
Gate Dielectric ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Electron Mobility Transistors ◽  
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Abstract

AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4Gate Insulator

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2278-2280 ◽  
Author(s):  
Masaru Ochiai ◽  
Mitsutoshi Akita ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Kouichi Maezawa ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Electron Mobility Transistors ◽  
Gan Heterostructure
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