Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements
2013 ◽
Vol 34
(11)
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pp. 1403-1405
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2012 ◽
Vol 33
(4)
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pp. 555-557
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2007 ◽
Vol 54
(5)
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pp. 1076-1082
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2017 ◽
Vol 35
(1)
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pp. 010601
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2012 ◽
Vol 51
(10R)
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pp. 100206
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