Highly efficient light emission based on plasmonics

Author(s):  
Koichi Okamoto ◽  
Yoichi Kawakami
2021 ◽  
Author(s):  
Jian-Qiang Zhao ◽  
Chen Sun ◽  
Meng Yue ◽  
Yan Meng ◽  
Xian-Mei Zhao ◽  
...  

One new lead chlorine cluster assembled 1D non-perovskite halide of [DTHPE]2Pb3Cl10 was synthesized which displays strong broadband bluish white light emission with a high photoluminescence quantum efficiency of 19.45% exceeding those of previously reported 2D lead perovskites.


2021 ◽  
Vol 31 (35) ◽  
pp. 2170258
Author(s):  
Jun‐Yi Li ◽  
Chang‐Feng Wang ◽  
Haodi Wu ◽  
Lang Liu ◽  
Qiu‐Ling Xu ◽  
...  

2020 ◽  
Vol 59 (6) ◽  
pp. 3527-3531 ◽  
Author(s):  
Xinyuan Zhang ◽  
Lina Li ◽  
Sasa Wang ◽  
Xitao Liu ◽  
Yunpeng Yao ◽  
...  

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Mohamed Ebaid ◽  
Jin-Ho Kang ◽  
Yang-Seok Yoo ◽  
Seung-Hyuk Lim ◽  
Yong-Hoon Cho ◽  
...  

2021 ◽  
Author(s):  
Jiaxuan Wang ◽  
Baoyan Liang ◽  
Jinbei Wei ◽  
Yincai Xu ◽  
Zhiqiang Li ◽  
...  

Pure organic room temperature phosphorescence (RTP) materials are considered as potential candidates for replacing precious metal-based complexes to fabricate highly efficient organic light emitting devices (OLEDs). However, for reported RTP materials, low photoluminescence quantum yields (PLQYs) in thin film state seriously impede their applications in OLEDs. On the other hand, how using normal organic fluorescence materials to fabricate OLEDs with an internal quantum efficiency (IQE) over 25% remains a great unaddressed issue beyond the thermally activated delayed fluorescence (TADF) sensitization approach. Here, we establish a strategy to construct highly efficient OLEDs based on pure organic RTP material sensitized fluorescence emitter. The key point for our strategy is that benzimidazole-triazine molecules (PIM-TRZ), 2,6-di(phenothiazinyl)naphthalene (β-DPTZN) and 5,6,11,12-tetraphenylnaphthacene (rubrene) were screened as host, phosphor sensitizer and fluorescent emitter, respectively. Detail photophysical characterizations demonstrate that the host material PIMTRZ with unique RTP nature is critical for achieving phosphor sensitizing process. As an organic RTP compound, the singlet and triplet state energy levels of β-DPTZN perfectly match with those of PIMTRZ, resulting in the formation and lasting existence of phosphor’s excitons in emitting layer. The large overlap between the absorption spectrum of rubrene and PL spectrum of PIM-TRZ:10% β-DPTZN film can facilitate the Förster energy transfer from the triplet β-DPTZN to the singlet rubrene and the finally displayed fluorescence is derived from singlet excited states of rubrene. The perfect collocation of host, phosphorescent sensitizer and fluorescent emitter in the emitting layer promise the predominant performance of the devices with external quantum efficiency (EQE) of 15.7%. The PLQY of emitting layer is 60.3%, and therefore about 90% carrier injection induced excitons are harvested for light emission. We present a new strategy to fabricate efficient fluorescent devices by employing ingenious combination of host, phosphorescent sensitizer and fluorescent emitter, which is significant to the development of OLEDs.<br>


Nanoscale ◽  
2019 ◽  
Vol 11 (47) ◽  
pp. 22899-22906 ◽  
Author(s):  
Miao He ◽  
Chunyun Wang ◽  
Jingzhou Li ◽  
Jiang Wu ◽  
Siwei Zhang ◽  
...  

All-inorganic perovskite CsPbBr3–Cs4PbBr6 composite nanocrystals (NCs) were synthesized via a convenient solution process without inert gas protection and systematically studied as green phosphors for light emitting diode (LED) applications.


2020 ◽  
Vol 8 (15) ◽  
pp. 5015-5019
Author(s):  
Lin Zhu ◽  
Guoliang Dai ◽  
Jia Chen ◽  
Changqing Ye ◽  
Xiaomei Wang ◽  
...  

Aldehyde-based diphenylanthracene derivatives were found to be prominent panchromatic luminescent triplet annihilators.


Author(s):  
Chen Sun ◽  
Qian-Qian Zhong ◽  
Xin Zhang ◽  
Pan-Chao Xiao ◽  
Yu Cheng ◽  
...  

2018 ◽  
Vol 8 (7) ◽  
pp. 1780 ◽  
Author(s):  
Jiajin Zheng ◽  
Qiang Lu ◽  
Ruilin Zheng ◽  
Hui Zou ◽  
Kehan Yu ◽  
...  

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1256
Author(s):  
Seoung-Hwan Park ◽  
Doyeol Ahn

In III-nitride quantum dots (QDs), optical transition rate is very low because of the large built-in electrostatic field caused by the spontaneous polarization (SP) and piezoelectric (PZ) effects. In this work, we study the screening potential which is a solution of the self-consistent Hartree equation taking into account the built-in electrostatic field and its effect on light emission characteristics of non-polar wurtzite (WZ) (112¯0) GaN/AlN QD. It is found that the light emission intensity of the non-polar (112¯0) GaN/AlN QD structure is expected to be about four times larger than that of the c-plane (0001) GaN/AlN QD structure because the y-polarized matrix elements in the non-polar QD are larger than that in the c-plane QD. These predictions indicate that non-polar GaN/AlN QD structure have strong potential for highly efficient opto-electronic devices.


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