A direct plasma etch approach to high aspect ratio polymer micromachining with applications in bioMEMS and CMOS-MEMS

Author(s):  
J.D. Zahn ◽  
K.J. Gabriel ◽  
G.K. Fedder
2001 ◽  
Author(s):  
Gary O’Brien ◽  
Xing Cheng ◽  
L. J. Guo

Abstract Sub-micron width high aspect ratio beam/trench arrays are etched into silicon substrates using a Surface Technology Systems (STS) deep reactive ion etch (RIE) tool equipped with a time multiplexed plasma etch/passivation cycle scheme. The oxide mask is patterned by nanoimprint lithography and minimizes lateral trench etching by adjusting the significant etch parameters. High aspect ratio trench arrays 350nm wide with a 700nm period are etched to a depth of 10 μm with typical sidewall asperities on the order of 30nm. A dual etch process is used to reduce scalloping near the trench surface using HBr/Cl to etch the initial 500nm followed by the STS process using C4F8/SF6 chemistry. The dual etch process resulted in a reduction of sidewall asperities from 75nm to less than 25nm. In addition, the dual etch process reduced the trench array depth variation from a measured standard deviation of 0.7 to 0.1 representing significant improvement of etch repeatability across the wafer sample.


1998 ◽  
Vol 145 (12) ◽  
pp. 4305-4312 ◽  
Author(s):  
Simon Karecki ◽  
Laura Pruette ◽  
Rafael Reif ◽  
Terry Sparks ◽  
Laurie Beu ◽  
...  

2001 ◽  
Author(s):  
Huikai Xie ◽  
Yingtian Pan ◽  
Gary K. Fedder

Abstract This paper reports a high-aspect-ratio, silicon-based vertical comb drive used to actuate a micromirror. The large displacement is achieved by the curled-up comb drives. This high-aspect-ratio vertical comb drive uses the vertical capacitance gradient of the sidewall capacitor existing between comb fingers. The electrical isolation is realized by using the undercut of the deep Si etch. The 1 mm by 1 mm micromirror is made of an approximately 40 μm-thick single-crystal silicon membrane with aluminum coated on the surface. The mirror has a peak-to-peak curling of 0.5 μm. The mechanical rotation angle of the mirror is ±5°. The fabrication process is compatible with standard CMOS processes, and there is no need for wafer bonding and accurate front-to-backside alignment. Such capability has potential applications in optical switches, optical scanners, interferometric systems, and vibratory gyroscopes.


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