Seawater density measurements in the temperature range between 278.15 K and 308.15 K at ambient pressure

AbstractIn this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient pressure. Growth was performed at ∼2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots.

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Viscosity and Density Measurements for Six Binary Mixtures of Water (Methanol or Ethanol) with an Ionic Liquid ([BMIM][DMP] or [EMIM][DMP]) at Atmospheric Pressure in the Temperature Range of (293.15 to 333.15) K

Journal of Chemical & Engineering Data ◽

10.1021/je200600p ◽

2011 ◽

Vol 57 (1) ◽

pp. 33-39 ◽

Cited By ~ 84

Author(s):

Yin-hui Gong ◽

Chong Shen ◽

Ying-zhou Lu ◽

Hong Meng ◽

Chun-xi Li

Keyword(s):

Ionic Liquid ◽

Binary Mixtures ◽

Atmospheric Pressure ◽

Density Measurements ◽

Temperature Range

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Refinement of thermodynamic data on GaN

Journal of Materials Research ◽

10.1557/jmr.2007.0441 ◽

2007 ◽

Vol 22 (12) ◽

pp. 3475-3483 ◽

Cited By ~ 17

Author(s):

K.T. Jacob ◽

Shwetank Singh ◽

Y. Waseda

Keyword(s):

Solid State ◽

Thermodynamic Data ◽

Chemical Potential ◽

Electronic Materials ◽

Ambient Pressure ◽

Decomposition Temperature ◽

Electrochemical Technique ◽

Limited Information ◽

Pure Nitrogen ◽

Temperature Range

Although GaN is one of the important electronic materials of this decade, thermodynamic data for this compound are not known with sufficient reliability. The limited information available is not internally consistent. Measured in this study are high-temperature heat capacities using a differential scanning calorimeter and Gibbs energies of formation employing a solid-state electrochemical technique. The solid-state cell was based on single-crystal CaF2 as the electrolyte and Ca3N2 as the auxiliary electrode to convert the nitrogen chemical potential established by the equilibrium between Ga and GaN into an equivalent fluorine potential. The heat capacity of GaN at ambient pressure can be represented by the equation: CoP / J mol−1 K−1 = 74.424 − 0.00106T + (46720/T2) − (685.9/T0.5), in the temperature range from 350 to 1075 K. The standard Gibbs energy of formation of GaN in the range from 875 to 1125 K can be expressed as: ΔfGo/ J mol−1 (±465) = −128,749 + 115.029 T. This corresponds to a decomposition temperature of 1119 ± 4 K for GaN in pure nitrogen at standard pressure. On the basis of these new measurements and a critical assessment of information that is available in the literature, a refined set of data for GaN in the temperature range from 298.15 to 1400 K is presented.

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DENSITY AND VISCOSITY OF THALLIUM AMALGAMS

Canadian Journal of Chemistry ◽

10.1139/v64-407 ◽

1964 ◽

Vol 42 (12) ◽

pp. 2749-2753 ◽

Cited By ~ 14

Author(s):

William T. Foley ◽

Arun K. Basak ◽

John R. Delorey

Keyword(s):

Density Measurements ◽

Temperature Range

The densities of thallium amalgams were measured at 25, 50, 70, 90,105, 125, and 160 °C over the concentration range 0 to 42% thallium by weight and the results were fitted to equations of the form d = a + bx + cx2, where d is the density in grams per ml, a, b, and c are constants and x is weight % thallium in the amalgam. The coefficient of expansion was calculated for the temperature range 25 to 90 °C. Viscosities relative to mercury were also determined over the same range of composition and at the same temperatures as were used in the density measurements. Equations were presented which show the variation of viscosity with composition and also the variation of viscosity with temperature.

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