scholarly journals DC Power Consumption [Enigmas, etc.]

2021 ◽  
Vol 22 (7) ◽  
pp. 90-92
Author(s):  
Takashi Ohira
Keyword(s):  
Author(s):  
Kazuki Ikeda ◽  
Masaki Tsunekawa ◽  
Yuto Iwasaki ◽  
Kazuto Yukita ◽  
Toshiro Matsumura ◽  
...  

2002 ◽  
Vol 50 (6) ◽  
pp. 1480-1486 ◽  
Author(s):  
L. Angelov ◽  
N. Wadefalk ◽  
J. Stenarson ◽  
E.L. Kollberg ◽  
P. Starski ◽  
...  
Keyword(s):  

2014 ◽  
Vol 24 (8) ◽  
pp. 551-553 ◽  
Author(s):  
Jongwon Lee ◽  
Jooseok Lee ◽  
Kyounghoon Yang

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 898 ◽  
Author(s):  
Hojong Choi

Transistor linearizer networks are proposed to increase the transmitted output voltage amplitudes of class-C amplifiers, thus, increasing the sensitivity of the echo signals of piezoelectric transducers, which are the main components in portable ultrasound instruments. For such instruments, class-C amplifiers could be among the most efficient amplifier schemes because, compared with a linear amplifier such as a class-A amplifier, they could critically reduce direct current (DC) power consumption, thus, increasing the battery life of the instruments. However, the reduced output voltage amplitudes of class-C amplifiers could deteriorate the sensitivity of the echo signals, thereby affecting the instrument performance. Therefore, a class-C linearized amplifier was developed. To verify the capability of the class-C linearized amplifier, typical pulse-echo responses using the focused piezoelectric transducers were tested. The echo signal amplitude generated by the piezoelectric transducers when using the class-C linearized amplifier was improved (1.29 Vp-p) compared with that when using the class-C amplifier alone (0.56 Vp-p). Therefore, the class-C linearized amplifier could be a potential candidate to increase the sensitivity of echo signals while reducing the DC power consumption for portable ultrasound instruments.


1991 ◽  
Vol 69 (3-4) ◽  
pp. 177-179
Author(s):  
Langis Roy ◽  
Malcolm G. Stubbs ◽  
James S. Wight

The design and performance of a high-gain, monolithic, broadband amplifier with extremely low power consumption are described. The amplifier, fabricated using a 0.5 μm GaAs depletion-mode MESFET (metal semiconductor field effect transistor) process, utilizes very small gate width devices to achieve a measured gain of 19 dB and a 0.1 to 2.1 GHz bandwidth with only 63 mW dc power dissipation. This is the lowest power consumption broadband MMIC (monolithic microwave integrated circuit) reported to date and is intended for mobile radio applications.


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