Design of a CMOS high frequency current conveyor based switched-capacitor filter with low power consumption

In this paper, a high frequency ring oscillator with low power consumption is proposed.The proposed ring oscillator is based on GRO by applying boot strap technique. Simulation resultsindicate that the FoM(Power Consumption/Oscillation Frequency) of the proposed ring oscillator isless than that of the conventional ring oscillator.

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CMOS Operational Floating Current Conveyor Circuit for Instrumentation Amplifier Application

International Journal of Electrical and Electronic Engineering & Telecommunications ◽

10.18178/ijeetc.9.5.317-323 ◽

2020 ◽

pp. 317-323

Author(s):

Fahmi Elsayed ◽

◽

Mostafa Rashdan ◽

Mohammad Salman

Keyword(s):

Power Consumption ◽

Low Power ◽

Current Conveyor ◽

Total Power ◽

Low Power Consumption ◽

Instrumentation Amplifier ◽

Fully Integrated ◽

Total Power Consumption ◽

High Bandwidth ◽

Operational Floating Current Conveyor

This paper presents a fully integrated CMOS Operational Floating Current Conveyor (OFCC) circuit. The proposed circuit is designed for instrumentation amplifier circuits. The CMOS OFCC circuit is designed and simulated using Cadence in TSMC 90 m technology kit. The circuit aims at two different design goals. The first goal is to design a low power consumption circuit (LBW design) while the second is to design a high bandwidth circuit (HBW design). The total power consumption of the LBW design is 1.26 mW with 30 MHz bandwidth while the power consumption of the HBW design is 3 mW with 104.6 MHz bandwidth.

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5.8GHz high frequency circuits using low frequency circuit configuration for low-power-consumption and high integration

Digest of Papers. 2005 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2005. ◽

10.1109/smic.2005.1587942 ◽

2006 ◽

Author(s):

H. Tsukada ◽

H. Hayashi ◽

H. Uda

Keyword(s):

Power Consumption ◽

Low Power ◽

High Frequency ◽

Low Frequency ◽

Low Power Consumption ◽

Circuit Configuration

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SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156401001076 ◽

2001 ◽

Vol 11 (04) ◽

pp. 1159-1248 ◽

Cited By ~ 18

Author(s):

D. FLANDRE ◽

J.-P. RASKIN ◽

D. VANHOENACKER-JANVIER

Keyword(s):

Power Consumption ◽

Low Power ◽

Transmission Lines ◽

High Frequency ◽

Silicon On Insulator ◽

Low Power Consumption ◽

New Model ◽

Microwave Applications ◽

High Degree

The new communication markets are vey demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applictions. After an overview of the SOI material, the properties of the SOI MOSFET's are analyzed and compared to bulk Si MOSFET's. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models for the transistors are presented and their limitations are given. A new model is described, valid from DC to the microwave region. This model agrees very well with the measurements for various transistor dimensions. Finally, variuos RF and microware circuits are presented. Ths paper does not fully describe all the properties and applications of SOI but the numerous references offered to the reader help him to gather more informations.

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