This research paper discusses the significance development in field-induced contact dual-gate organic light emitting transistor (FIC-DGOLET) device architecture and characteristics. The device behaviour is analyzed and observed significant value of electroluminescent efficiency. The deep investigation of FIC-DGOLET device is discussed in this paper, where impact of varying the various parameters such as thickness of organic semiconductor (OSC) materials from the range of 400 nm to 200 nm at altered value of threshold voltage by using 2D ATLAS simulator. Its theoretical calculation influence over the dynamic control of the device characteristics such as saturated drain current (I ds ), mobility (μ), threshold voltage (V th ) as well as sub threshold swing. The FIC-DGOLET is a dual-gate transistor which also emits light by the operations of two accumulated regions, that are electrons and holes which is not completely overlapped to each other. The leakage current in DG-OLET can be reduced to the extent that 70% than single gate OLET (SG-OLET). The recombination zone mechanism of FIC-DGOLET plays a vital role in its performance, where we get comparable value of electroluminescent efficiency with reported, low value of exciton quenching and current densities. The extracted parameters of DG-OLETs are like drive current of 100A, I on/off 108, threshold voltage V th of 1.3 V at V gs of –3 V and V ds of 0 to –3 V. These extracted performance parameters are very helpful in designing of flexible display applications.
Equivalent Circuit Modeling of a Dual-Gate Graphene FET
