Analysis of electrical characteristics and electroluminescent efficiency of field induced contact-DGOLET

2022 ◽  
pp. 1-11
Author(s):  
Sandeep Kumar Ojha ◽  
Brijesh Kumar
Keyword(s):  
Threshold Voltage ◽  
Dynamic Control ◽  
Drain Current ◽  
Vital Role ◽  
Electrical Characteristics ◽  
Flexible Display ◽  
Light Emitting ◽  
Device Architecture ◽  
Dual Gate ◽  
Current Densities

This research paper discusses the significance development in field-induced contact dual-gate organic light emitting transistor (FIC-DGOLET) device architecture and characteristics. The device behaviour is analyzed and observed significant value of electroluminescent efficiency. The deep investigation of FIC-DGOLET device is discussed in this paper, where impact of varying the various parameters such as thickness of organic semiconductor (OSC) materials from the range of 400 nm to 200 nm at altered value of threshold voltage by using 2D ATLAS simulator. Its theoretical calculation influence over the dynamic control of the device characteristics such as saturated drain current (I ds ), mobility (μ), threshold voltage (V th ) as well as sub threshold swing. The FIC-DGOLET is a dual-gate transistor which also emits light by the operations of two accumulated regions, that are electrons and holes which is not completely overlapped to each other. The leakage current in DG-OLET can be reduced to the extent that 70% than single gate OLET (SG-OLET). The recombination zone mechanism of FIC-DGOLET plays a vital role in its performance, where we get comparable value of electroluminescent efficiency with reported, low value of exciton quenching and current densities. The extracted parameters of DG-OLETs are like drive current of 100A, I on/off 108, threshold voltage V th of 1.3 V at V gs of –3 V and V ds of 0 to –3 V. These extracted performance parameters are very helpful in designing of flexible display applications.

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides

2010 ◽  
Vol 645-648 ◽  
pp. 681-684 ◽  
Author(s):  
Michael Grieb ◽  
Masato Noborio ◽  
Dethard Peters ◽  
Anton J. Bauer ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Drain Current ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Gate Oxides ◽  
Operation Conditions ◽  
Mos Devices ◽  
Thermal Oxide ◽  
Order Of Magnitude

The electrical characteristics and the reliability of different oxides on the 4H-SiC Si-face for gate oxide application in MOS devices are compared under MOSFET operation conditions at room temperature, at 100°C and at 130°C. The oxides are either an 80nm thick deposited oxide annealed in NO or an 80nm thick grown oxide in diluted N2O. The deposited oxide shows significant higher QBD- and lower Dit-values as well as a stronger decrease of drain current under stress than the grown oxide. Although for the deposited oxide, the leakage current below subthreshold increases more than one order of magnitude during constant circuit stress at room temperature, for the thermal oxide it is quite constant, but at higher level for higher temperatures.

scholarly journals THE INFLUENCE OF THE MOVEMENT OF IMPURITY IONS ON THE STABILITY OF LEDS

2020 ◽  
Vol 1 (1) ◽  
pp. 101-107
Author(s):  
V.I. Irkha ◽  
◽  
P.Yu. Markolenko ◽  
T.D. Markolenko
Keyword(s):  
Diffusion Coefficient ◽  
Degradation Mechanism ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
High Concentration ◽  
Light Emitting ◽  
Current Densities ◽  
Impurity Centers ◽  
The Stability ◽  
Kinetics Of

The influence of the motion of impurity centers on the stability of GaInAsP-based light- emitting diodes and their efficiency are studied. The stability and efficiency of the electroluminescence of LEDs is mainly determined by the ratio between the intensities of the radiative and non-radiative recombination of charge carriers. We studied the electroluminescent and electrical characteristics of LEDs. To clarify the degradation mechanism of LEDs, we studied the effect of their current training for 3000 hours at various current densities for stability and efficiency and for their electrical characteristics. It was shown that the degradation of LEDs at low injection levels is associated with the drift of impurity centers near the inhomogeneities of р-л-junctions. It is shown that during the degradation of LEDs, the magnitude of the radiative current component at a fixed voltage varies little. At the same time, nonradiative current components increase significantly. It was established that the growth of nonradiative current components is associated with the drift of mobile impurities to inhomogeneities of the р-л-junction. The kinetics of LED degradation was calculated using certain assumptions. The diffusion coefficient of the ions responsible for the degradation of the diodes is estimated. It is shown that “sudden” LED failures are of the same nature as their gradual degradation. They can occur at a sufficiently high concentration of mobile impurities. The obtained dependences of the radiation intensity on the duration of degradation can be used to estimate the diffusion coefficient of a mobile impurity.

DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure

2015 ◽  
Vol 15 (10) ◽  
pp. 7467-7471 ◽  
Author(s):  
Sejun Hong ◽  
Abu ul Hassan Sarwar Rana ◽  
Jun-Woo Heo ◽  
Hyun-Seok Kim
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Positive Direction ◽  
Electron Mobility Transistors ◽  
Gate Structure ◽  
Dual Gate ◽  
Gan Hemts ◽  
Dimensional Electron Gas

Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from −4.2 V in a conventional single-gate HEMT to −2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

Electrical Characteristics of Different Gate Geometry of FinFET

2016 ◽  
Vol 705 ◽  
pp. 174-178 ◽  
Author(s):  
Nuttapong Patcharasardtra ◽  
Weera Pengchan
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
Subthreshold Swing ◽  
Electrical Characteristics ◽  
Gate Width ◽  
Voltage Threshold ◽  
Gate Structure ◽  
Current Voltage

This paper proposed to the electrical characteristics of difference gate geometry of FinFET. Four of difference gate structure have been designed and simulated by GTS Framework TCAD software which is simulation the characteristics of FinFET device include drain current-voltage, threshold voltage and subthreshold swing. Then, the electrical characteristics was compared. From the result found that the drain current depend on gate geometry of FinFET. The largest gate geometry of FinFET device was the rectangle shape with gate width at 66 nm, IDS about 19.8 mA and VTH = 0.5 V and the smallest gate geometry, the triangle shape with gate width at 52 nm and give IDS about 8.5 mA and Vth = 0.5 V.

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate
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