A U-band direct injection-locked frequency divider with wide input locking range and low power

2017 ◽  
Author(s):  
Zhenwu Wang ◽  
Sijia Jiang ◽  
Zheng Song ◽  
Baoyong Chi
Keyword(s):  
Low Power ◽  
Direct Injection ◽  
Frequency Divider ◽  
Locking Range

A Low Power V-Band CMOS Frequency Divider With Wide Locking Range and Accurate Quadrature Output Phases

2008 ◽  
Vol 43 (4) ◽  
pp. 991-998 ◽  
Author(s):  
Qun Gu ◽  
Zhiwei Xu ◽  
Daquan Huang ◽  
Tim LaRocca ◽  
Ning-Yi Wang ◽  
...  
Keyword(s):  
Low Power ◽  
Frequency Divider ◽  
V Band ◽  
Locking Range ◽  
Wide Locking Range

Effects of Hot-Carrier Stress on the RF Performance of a 0.18-μm MOS Divide-by-4 LC Injection-Locked Frequency Divider

2014 ◽  
Vol 13 (02) ◽  
pp. 1450009
Author(s):  
Sheng-Lyang Jang ◽  
Tsung-Chao Fu
Keyword(s):  
Phase Noise ◽  
Frequency Tuning ◽  
Supply Voltage ◽  
Direct Injection ◽  
Frequency Divider ◽  
External Signal ◽  
Cmos Process ◽  
Hot Carrier ◽  
Locking Range ◽  
Hot Carrier Stress

The effect of ac hot-carrier stress on the performance of a wide locking range divide-by-4 injection-locked frequency divider (ILFD) is investigated. The ILFD was implemented in the TSMC 0.18 μm 1P6M CMOS process. The ILFD uses direct injection MOSFETs for coupling external signal to the resonators. Radio frequency (RF) circuit parameters such as oscillation frequency, tuning range, phase noise, and locking range before and after RF stress at an elevated supply voltage for 5 h have been examined by experiment. The measured locking range, operation range and phase noise after RF stress shows significant degradation from the fresh circuit condition.

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