Impact of geometry aspect ratio on 10-nm gate-all-around silicon-germanium nanowire field effect transistors

14th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2014.6968188 ◽

2014 ◽

Author(s):

Pei-Jung Chao ◽

Yiming Li

Keyword(s):

Aspect Ratio ◽

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors

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High Aspect Ratio Conjugated Polymer Nanowires for High Performance Field-Effect Transistors and Phototransistors

ACS Nano ◽

10.1021/acsnano.5b01982 ◽

2015 ◽

Vol 9 (5) ◽

pp. 5264-5274 ◽

Author(s):

Hyun Ah Um ◽

Dae Hee Lee ◽

Dong Uk Heo ◽

Da Seul Yang ◽

Jicheol Shin ◽

...

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Conjugated Polymer ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Polymer Nanowires

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Investigation of the Role of Aspect Ratio for the Design of Si-Nanowire Field-Effect-Transistors in Ballistic Regime

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2013.1680 ◽

2013 ◽

Vol 5 (10) ◽

pp. 1087-1090 ◽

Author(s):

Basudev Nag Chowdhury ◽

Sanatan Chattopadhyay

Keyword(s):

Aspect Ratio ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Regime ◽

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Optimal Geometry Aspect Ratio of Ellipse-Shaped-Surrounding-Gate Nanowire Field Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.10762 ◽

2016 ◽

Vol 16 (1) ◽

pp. 920-923 ◽

Author(s):

Yiming Li

Keyword(s):

Aspect Ratio ◽

Field Effect ◽

Field Effect Transistors ◽

Optimal Geometry ◽

Surrounding Gate

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High Aspect-Ratio ZnO Nanowires Based Nanoscale Field Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2009.460 ◽

2009 ◽

Vol 9 (4) ◽

pp. 2692-2697 ◽

Author(s):

Ahmad Umar ◽

Y. K. Park ◽

Y. B. Hahn

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Field Effect ◽

Field Effect Transistors ◽

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Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/24/11/115021 ◽

2009 ◽

Vol 24 (11) ◽

pp. 115021 ◽

Author(s):

Hui-Wen Cheng ◽

Yiming Li

Keyword(s):

Aspect Ratio ◽

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics

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Sensing of cancer cell ion exchange as a biomarker with high aspect ratio field-effect transistors

2017 IEEE SENSORS ◽

10.1109/icsens.2017.8233985 ◽

2017 ◽

Author(s):

Mohammad G. Abdallah ◽

Rayan Khan ◽

Young-Tae Kim ◽

Samir M. Iqbal

Keyword(s):

Ion Exchange ◽

Aspect Ratio ◽

Cancer Cell ◽

High Aspect Ratio ◽

Field Effect ◽

Field Effect Transistors

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Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon–Germanium Wire Tri-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain

Applied Physics Express ◽

10.1143/apex.3.124201 ◽

2010 ◽

Vol 3 (12) ◽

pp. 124201 ◽

Author(s):

Keiji Ikeda ◽

Minoru Oda ◽

Yuuichi Kamimuta ◽

Yoshihiko Moriyama ◽

Tsutomu Tezuka

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Drive Current ◽

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Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors

Journal of Electronic Materials ◽

10.1007/s11664-006-0205-y ◽

2006 ◽

Vol 35 (8) ◽

pp. 1607-1612 ◽

Author(s):

S. Dey ◽

S. Joshi ◽

D. Garcia-Gutierrez ◽

M. Chaumont ◽

A. Campion ◽

...

Keyword(s):

Epitaxial Growth ◽

Silicon Substrate ◽

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Bulk Silicon ◽

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Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized Charges

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2014.3332 ◽

2014 ◽

Vol 11 (1) ◽

pp. 165-172 ◽

Author(s):

Mirgender Kumar ◽

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

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Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.4403 ◽

2008 ◽

Vol 47 (6) ◽

pp. 4403-4407 ◽

Author(s):

Naoharu Sugiyama ◽

Toshinori Numata ◽

Norio Hirashita ◽

Toshifumi Irisawa ◽

Shin-ichi Takagi

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Strain Distribution ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Uniform Strain ◽

Oxide Semiconductor ◽

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