Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates
2008 ◽
Vol 47
(6)
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pp. 4403-4407
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2014 ◽
Vol 11
(1)
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pp. 165-172
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2010 ◽
Vol 49
(8)
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pp. 08JC02
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2020 ◽
Vol 19
(4)
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pp. 1478-1484
1995 ◽
Vol 34
(Part 2, No. 8A)
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pp. L978-L980