An array of cobalt nanorods of 10 nm in diameter and 14 nm of rod-to-rod distance was fabricated by electrochemical deposition technique into the pores of a mesoporous silica thin film formed on a Pt -coated Si wafer substrate. The cobalt nanorods are highly crystalline with the fcc structure. The magnetic hysterisis data at 300 K show that Co @silica nanocomposite film has strong magnetization anisotropy. Atomic and magnetic force microscopic data on this film revealed the possibility that each cobalt nanorod in the array can be individually magnetized. The number density of the cobalt nanorods is very high with 6 × 1012 per in2, high enough to develop into a terabit magnetic memory device.
A chiral-based magnetic memory device without a permanent magnet
