Unusual magnetic behavior in a chiral-based magnetic memory device

Magnetic behavior of ferromagnetic materials has been using to detect defects of materials. To evaluate the stress states of the components by the magnetic memory signal, Q235 defect asymmetrical samples were made. The characteristics of magnetic memory of Q235 have been studied in the three different testing environments which are online-loading, online-unloading and offline-unloading under cycle tensile stress. The results show that magnetic memory signals have different characteristics in different testing environment. It is feasible to evaluate preliminarily the stress state by the magnetic memory signals.

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Magnetic memory device for business machines

Electrical Engineering ◽

10.1109/ee.1955.6439406 ◽

1955 ◽

Vol 74 (6) ◽

pp. 466-468 ◽

Cited By ~ 2

Author(s):

S. J. Begun

Keyword(s):

Memory Device ◽

Magnetic Memory

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TEMPLATED SYNTHESIS OF NANOSTRUCTURED COBALT THIN FILM FOR POTENTIAL TERABIT MAGNETIC RECORDING

NANO ◽

10.1142/s1793292006000057 ◽

2006 ◽

Vol 01 (01) ◽

pp. 41-45 ◽

Cited By ~ 3

Author(s):

U-HWANG LEE ◽

JONG BAE PARK ◽

SEONG KYU KIM ◽

YOUNG-UK KWON

Keyword(s):

Thin Film ◽

Memory Device ◽

Magnetic Memory ◽

Templated Synthesis ◽

Wafer Substrate ◽

Silica Thin Film ◽

Cobalt Thin Film ◽

Fcc Structure ◽

Very High ◽

Si Wafer

An array of cobalt nanorods of 10 nm in diameter and 14 nm of rod-to-rod distance was fabricated by electrochemical deposition technique into the pores of a mesoporous silica thin film formed on a Pt -coated Si wafer substrate. The cobalt nanorods are highly crystalline with the fcc structure. The magnetic hysterisis data at 300 K show that Co @silica nanocomposite film has strong magnetization anisotropy. Atomic and magnetic force microscopic data on this film revealed the possibility that each cobalt nanorod in the array can be individually magnetized. The number density of the cobalt nanorods is very high with 6 × 1012 per in2, high enough to develop into a terabit magnetic memory device.

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A chiral-based magnetic memory device without a permanent magnet

Nature Communications ◽

10.1038/ncomms3256 ◽

2013 ◽

Vol 4 (1) ◽

Cited By ~ 88

Author(s):

Oren Ben Dor ◽

Shira Yochelis ◽

Shinto P. Mathew ◽

Ron Naaman ◽

Yossi Paltiel

Keyword(s):

Permanent Magnet ◽

Memory Device ◽

Magnetic Memory

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ELECTRIC-FIELD CONTROL OF GIANT MAGNETORESISTANCE IN SPIN-VALVES

SPIN ◽

10.1142/s2010324712500063 ◽

2012 ◽

Vol 02 (01) ◽

pp. 1250006 ◽

Cited By ~ 8

Author(s):

SYED RIZWAN ◽

H. F. LIU ◽

X. F. HAN ◽

SEN ZHANG ◽

Y. G. ZHAO ◽

...

Keyword(s):

Magnetic Properties ◽

Electric Field ◽

Maximum Degree ◽

Giant Magnetoresistance ◽

Spin Valve ◽

Memory Device ◽

Magnetic Memory ◽

Magnetic Layers ◽

Field Control ◽

Electric Field Induced Strain

It has been known that magnetic properties of a ferromagnet grown on piezoelectric substrates can be altered by the electric field-induced strain. We consider spin-valve CoFe/Cu/CoFe/IrMn grown on (011)-cut piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) substrate and investigate the effect of the electric field on the giant magnetoresistance (GMR) of the spin valve. We found that the electric field induced strain on PMN–PT substrate enhances the coercivity of the magnetic layers. The transport measurement shows that the GMR ratio of the spin valve could be altered as much as 50% for an electric field of -8 kV/cm. The change of GMR is attributed to the reduced maximum degree of the antiparallel alignment between the magnetization directions of the free and pinned layers. The present studies establish a prototype electrically tunable magnetic memory device such that the electric field can reversibly tune spin valve magnetoresistance without deteriorating electric and magnetic properties.

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