Thermal stability of micro- and nanoscale magnetite by thermomagnetic analysis data

Author(s):  
V.P. Ponomar ◽  
N.O. Dudchenko ◽  
A.B. Brik
2011 ◽  
Vol 1312 ◽  
Author(s):  
Rafael Villegas ◽  
Yun Zhai ◽  
Hailan Xu ◽  
Dorina Magdalena Chipara ◽  
David Hui ◽  
...  

ABSTRACTNanocomposites of polystyrene loaded with various amounts of anatase (ranging between 0 % wt. and 20 % wt.) have been synthesized and investigated by thermal analysis. The research was focused on the simulation of Thermogravimetric Analysis data, aiming to a refined understanding of the interactions between of polystyrene and TiO2 nanoparticles. The dependence of the first derivative of residual mass on temperature has been used to determine more accurately the temperature at which the mass loss is maxim. Several functions have been used to simulate the dependence of the first derivative of mass loss on the temperature of the sample. The highest correlation coefficient was obtained for the asymmetric Gaussian combination, which connects two halves of a Gaussian line with different linewidth. An increase of the thermal stability of the polymeric matrix upon loading with TiO2 is reported.


2019 ◽  
Vol 32 (4) ◽  
pp. 418-428 ◽  
Author(s):  
Maryam Rasekh ◽  
Zahra Rafiee

Polyimide (PI)/Fe3O4 nanocomposites were successfully prepared via the thermal curing of different amounts of Fe3O4 nanoparticles (2, 4, 6 and 8 wt%) functionalized by 3-aminopropyltriethoxy silane as a coupling agent, containing the poly(amic acid) derived from 5-diamino- N-(4-(4,5-diphenyl-1H-imidazol)phenyl)benzamide and 3,3′,4,4′-benzophenonetetracarboxylic dianhydride. The effect of Fe3O4 nanoparticles on the structural, thermal and magnetic properties of nanocomposites was investigated. The Fourier transform infrared spectroscopy and scanning electron microscopy (SEM) results reveal that the surface of Fe3O4 nanoparticles is sufficiently compatible with PI through linkage of the coupling agent between Fe3O4 and the polymer. Also, the SEM image shows that Fe3O4 nanoparticles are dispersed uniformly in the polymer matrix, with a particle size of around 78 nm. The nanocomposites of 2 and 8 wt% exhibit the saturation magnetization values of 0.055 and 0.170 emu g− 1, respectively. The thermogravimetric analysis data show that the thermal stability of the nanocomposites is improved as compared to the pure PI.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  

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