Low frequency drain current flicker noise model for pocket implanted nano scale n-MOSFET

2010 ◽  
Author(s):  
Muhibul H. Bhuyan ◽  
Quazi D. M. Khosru
Keyword(s):  
Flicker Noise ◽  
Low Frequency ◽  
Drain Current ◽  
Noise Model ◽  
Nano Scale

Low Frequency Noise in 4H-SiC MOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 817-820 ◽  
Author(s):  
Sergey L. Rumyantsev ◽  
Michael S. Shur ◽  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Low Frequency ◽  
Drain Current ◽  
Localized States ◽  
Conduction Band Edge ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Channel Mobility ◽  
Strong Inversion ◽  
First Time

Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.

scholarly journals Analysis of Noise and Velocity in GNSS EPN-Repro 2 Time Series

2021 ◽  
Vol 13 (14) ◽  
pp. 2783
Author(s):  
Sorin Nistor ◽  
Norbert-Szabolcs Suba ◽  
Kamil Maciuk ◽  
Jacek Kudrys ◽  
Eduard Ilie Nastase ◽  
...  
Keyword(s):  
Time Series ◽  
Visual Inspection ◽  
Flicker Noise ◽  
Vertical Component ◽  
Likelihood Estimation ◽  
Noise Model ◽  
Noise Amplitude ◽  
Allan Deviation ◽  
Power Spectral ◽  
Position Time Series

This study evaluates the EUREF Permanent Network (EPN) station position time series of approximately 200 GNSS stations subject to the Repro 2 reprocessing campaign in order to characterize the dominant types of noise and amplitude and their impact on estimated velocity values and associated uncertainties. The visual inspection on how different noise model represents the analysed data was done using the power spectral density of the residuals and the estimated noise model and it is coherent with the calculated Allan deviation (ADEV)-white and flicker noise. The velocities resulted from the dominant noise model are compared to the velocity obtained by using the Median Interannual Difference Adjusted for Skewness (MIDAS). The results show that only 3 stations present a dominant random walk noise model compared to flicker and powerlaw noise model for the horizontal and vertical components. We concluded that the velocities for the horizontal and vertical component show similar values in the case of MIDAS and maximum likelihood estimation (MLE), but we also found that the associated uncertainties from MIDAS are higher compared to the uncertainties from MLE. Additionally, we concluded that there is a spatial correlation in noise amplitude, and also regarding the differences in velocity uncertainties for the Up component.

Low-frequency 1/f noise model for short-channel LDD MOSFETs

1998 ◽  
Vol 42 (6) ◽  
pp. 891-899 ◽  
Author(s):  
Sheng-Lyang Jang ◽  
Heng-Kuen Chen ◽  
Man-Chun Hu
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Short Channel

1/f Noise Behavior in Pentacene Organic Thin Film Transistors

1999 ◽  
Vol 598 ◽  
Author(s):  
P. V. Necliudov ◽  
D. J. Gundlach ◽  
T. N. Jackson ◽  
S. L. Rumyantsev ◽  
M. S. Shur
Keyword(s):  
Thin Film ◽  
Conducting Polymers ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Organic Thin Film ◽  
Amorphous Si ◽  
Parameter Values ◽  
Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

Sign in / Sign up

Export Citation Format

Share Document