Determination of transconductance-to-drain-current dependent flicker noise parameters

2015 ◽  
Author(s):  
Jack Ou
Keyword(s):  
Flicker Noise ◽  
Drain Current ◽  
Noise Parameters

Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Pumping ◽  
Drain Current ◽  
Stress Tests ◽  
Optically Pumped ◽  
Gan Hemt ◽  
Load Line ◽  
Gan Hemts ◽  
Dc Stress

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

scholarly journals Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

2018 ◽  
Vol 69 (5) ◽  
pp. 390-394
Author(s):  
Martin Florovič ◽  
Róbert Szobolovszký ◽  
Jaroslav Kováč ◽  
Jaroslav Kováč ◽  
Aleš Chvála ◽  
...  
Keyword(s):  
Operation Mode ◽  
Drain Current ◽  
Temperature Dependent ◽  
Saturation Velocity ◽  
Channel Temperature ◽  
Device Reliability ◽  
Source Resistance ◽  
Current Change ◽  
Voltage Saturation

Abstract GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.

Computer-aided determination of two-port noise parameters (CADON)

1970 ◽  
Vol 58 (11) ◽  
pp. 1850-1851 ◽  
Author(s):  
W. Kotyczka ◽  
A. Leupp ◽  
M.J.O. Strutt
Keyword(s):  
Noise Parameters ◽  
Computer Aided

A Unified Explanation of gm/ID-Based Noise Analysis

2014 ◽  
Vol 24 (01) ◽  
pp. 1550010 ◽  
Author(s):  
Jack Ou ◽  
Pietro M. Ferreira
Keyword(s):  
Thermal Noise ◽  
Flicker Noise ◽  
Practical Implication ◽  
Noise Analysis ◽  
Drain Current ◽  
Corner Frequency ◽  
Noise Power ◽  
Noise Power Spectral Density ◽  
Power Spectral ◽  
The Relationship

We present an unified explanation of the transconductance-to-drain current (gm/ID)-based noise analysis in this paper. We show that both thermal noise coefficient (γ) and device noise corner frequency (f co ) are dependent on the gm/ID of a transistor. We derive expressions to demonstrate the relationship between the normalized noise power spectral density technique and the technique based on γ and f co . We conclude this letter with examples to demonstrate the practical implication of our study. Our results show that while both techniques discussed in this letter can be used to compute noise numerically, using γ and f co to separate thermal noise from flicker noise provides additional insight for optimizing noise.

The determination of device noise parameters

1969 ◽  
Vol 57 (8) ◽  
pp. 1461-1462 ◽  
Author(s):  
R.Q. Lane
Keyword(s):  
Noise Parameters ◽  
Device Noise

Low Frequency Noise in 4H-SiC MOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 817-820 ◽  
Author(s):  
Sergey L. Rumyantsev ◽  
Michael S. Shur ◽  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Low Frequency ◽  
Drain Current ◽  
Localized States ◽  
Conduction Band Edge ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Channel Mobility ◽  
Strong Inversion ◽  
First Time

Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.

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