An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47as a separated double-gate HEMT

Servin Rathi; Jyotika Jogi; Mridula Gupta; R S Gupta

doi:10.1088/0268-1242/25/11/115003

An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47as a separated double-gate HEMT

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/11/115003 ◽

2010 ◽

Vol 25 (11) ◽

pp. 115003 ◽

Cited By ~ 1

Author(s):

Servin Rathi ◽

Jyotika Jogi ◽

Mridula Gupta ◽

R S Gupta

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Nano Scale

Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523503 ◽

2013 ◽

Cited By ~ 1

Author(s):

M. Cheralathan ◽

C. Sampedro ◽

F. Gamiz ◽

B. Iniguez

Keyword(s):

Temperature Dependence ◽

Current Model ◽

Drain Current ◽

Double Gate

An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

Analytical drain current model to study the impact of interface trap charges on device performance of Double Gate Ge Ferroelectric FET (DGGeFeFET)

2018 Conference on Emerging Devices and Smart Systems (ICEDSS) ◽

10.1109/icedss.2018.8544314 ◽

2018 ◽

Author(s):

Monika Bansal ◽

Harsupreet Kaur

Keyword(s):

Current Model ◽

Drain Current ◽

Interface Trap ◽

Device Performance ◽

Double Gate ◽

The Impact ◽

Trap Charges

A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424994 ◽

2010 ◽

Author(s):

Lining Zhang ◽

Xingye Zhou ◽

Yiwen Xu ◽

Lin Chen ◽

Wang Zhou ◽

...

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Velocity Saturation ◽

Surrounding Gate

Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket

Microelectronics Reliability ◽

10.1016/j.microrel.2015.09.014 ◽

2016 ◽

Vol 59 ◽

pp. 30-36 ◽

Cited By ~ 7

Author(s):

Ping Wang ◽

YiQi Zhuang ◽

Cong Li ◽

Zhi Jiang ◽

YuQi Liu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422298 ◽

2007 ◽

Author(s):

Venkatnarayan Hariharan ◽

Juzer Vasi ◽

Ramgopal Rao

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Saturation Model ◽

Velocity Saturation

Explicit drain current model of junctionless double-gate field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.07.015 ◽

2013 ◽

Vol 89 ◽

pp. 134-138 ◽

Cited By ~ 10

Author(s):

Ashkhen Yesayan ◽

Fabien Prégaldiny ◽

Jean-Michel Sallese

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Double Gate

Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects

Microelectronics Reliability ◽

10.1016/j.microrel.2010.10.002 ◽

2011 ◽

Vol 51 (3) ◽

pp. 550-555 ◽

Cited By ~ 17

Author(s):

F. Djeffal ◽

T. Bentrcia ◽

M.A. Abdi ◽

T. Bendib

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Gate Stack ◽

Hot Carrier ◽

Hot Carrier Degradation

Drain current model for strained-Si/Si1−xGex/strained-Si double-gate MOSFETs including quantum effects

Semiconductor Science and Technology ◽

10.1088/0268-1242/26/9/095022 ◽

2011 ◽

Vol 26 (9) ◽

pp. 095022 ◽

Cited By ~ 2

Author(s):

S Mohammadi ◽

A Afzali-Kusha ◽

S Mohammadi

Keyword(s):

Current Model ◽

Drain Current ◽

Quantum Effects ◽

Double Gate ◽

Strained Si

Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs

AIP Advances ◽

10.1063/1.4892609 ◽

2014 ◽

Vol 4 (8) ◽

pp. 087107 ◽

Cited By ~ 5

Author(s):

W. Deng ◽

X. Ma ◽

J. Huang

Keyword(s):

Surface Potential ◽

Current Model ◽

Drain Current ◽

Double Gate