Crystal Growth and Characterization of Cd0.9Zn 0.1Te for Gamma-Ray Detectors: Thermally Stimulated Current (TSC), Electron Beam Induced Current (EBIC), and Pulse Height Spectroscopy (PHS)

2017 ◽  
Author(s):  
Cihan Oner ◽  
Towhid A. Chowdhury ◽  
Krishna C. Mandal
Keyword(s):  
Electron Beam ◽  
Crystal Growth ◽  
Gamma Ray ◽  
Pulse Height ◽  
Induced Current ◽  
Thermally Stimulated Current ◽  
Gamma Ray Detectors ◽  
Electron Beam Induced Current

Low Temperature Crystal Growth and Characterization of Cd0.9Zn0.1Te for Radiation Detection Applications

2011 ◽  
Vol 1341 ◽  
Author(s):  
Ramesh M. Krishna ◽  
Timothy C. Hayes ◽  
Peter G. Muzykov ◽  
Krishna C. Mandal
Keyword(s):  
Low Temperature ◽  
Radiation Detection ◽  
Pulse Height ◽  
Growing Up ◽  
Induced Current ◽  
Thermally Stimulated Current ◽  
Solvent Method ◽  
Melting Temperatures ◽  
Electron Beam Induced Current

ABSTRACTCd0.9Zn0.1Te (CZT) detector grade crystals were grown from zone refined Cd, Zn, and Te (7N) precursor materials, using the tellurium solvent method. These crystals were grown using a high temperature vertical furnace designed and installed in our laboratory. The furnace is capable of growing up to 8” diameter crystals, and custom pulling and ampoule rotation functions using custom electronics were furnished for this setup. CZT crystals were grown using excess Te as a solvent with growth temperatures lower than the melting temperatures of CZT (1092°C). Tellurium inclusions were characterized through IR transmittance maps for the grown CZT ingots. The crystals from the grown ingots were processed and characterized using I-V measurements for electrical resistivity, thermally stimulated current (TSC), and electron beam induced current (EBIC). Pulse height spectra (PHS) measurements were carried out using a 241Am (59.6 keV) radiation source, and an energy resolution of ~4.2% FWHM was obtained. Our investigation demonstrates high quality detector grade CZT crystals growth using this low temperature solvent method.

Characterization of 4H-SiC pn Structures with Unstable Excess Current

2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Induced Current ◽  
Excess Current ◽  
Forward Current ◽  
Electron Beam Induced Current

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.

Characterization of GaAs wafers and epilayers with electron‐beam‐induced current, etching, and reflected light

1987 ◽  
Vol 62 (10) ◽  
pp. 4248-4254 ◽  
Author(s):  
L. D. Partain ◽  
S. M. Dean ◽  
B. L. Berard ◽  
P. S. McLeod ◽  
L. M. Fraas ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Reflected Light ◽  
Electron Beam Induced Current
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