Development of Electron Beam Induced Current Characterization of HgCdTe Based Photodiodes

2019 ◽  
Vol 48 (10) ◽  
pp. 6045-6052 ◽  
Author(s):  
A. Yèche ◽  
F. Boulard ◽  
O. Gravrand
2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.


1987 ◽  
Vol 62 (10) ◽  
pp. 4248-4254 ◽  
Author(s):  
L. D. Partain ◽  
S. M. Dean ◽  
B. L. Berard ◽  
P. S. McLeod ◽  
L. M. Fraas ◽  
...  

2011 ◽  
Vol 65 (5) ◽  
pp. 911-914 ◽  
Author(s):  
Peter G. Muzykov ◽  
Ramesh Krishna ◽  
Sandip Das ◽  
Timothy Hayes ◽  
Tangali S. Sudarshan ◽  
...  

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