In-plane polarization dependence of gain in strained quantum-wire lasers with strain-compensating barriers

2004 ◽  
Author(s):  
A. Haque ◽  
T. Maruyama ◽  
H. Yagi ◽  
T. Sano ◽  
S. Arai
Keyword(s):  
Quantum Wire ◽  
Polarization Dependence

Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP-InP quantum-wire lasers

2004 ◽  
Vol 40 (9) ◽  
pp. 1344-1351 ◽  
Author(s):  
A. Haque ◽  
T. Maruyama ◽  
H. Yagi ◽  
T. Sano ◽  
P. Dhanorm ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Optical Gain ◽  
Polarization Dependence

Polarization dependence of light emitted from GaAsp‐njunctions in quantum wire crystals

1994 ◽  
Vol 75 (8) ◽  
pp. 4220-4225 ◽  
Author(s):  
K. Haraguchi ◽  
T. Katsuyama ◽  
K. Hiruma
Keyword(s):  
Quantum Wire ◽  
Polarization Dependence

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Coherent Control of Semiconductor Quantum Wire by High-Resolution and Stable Michelson Interferometer

2008 ◽  
Vol 128 (6) ◽  
pp. 285-291
Author(s):  
Takumi Okada ◽  
Kazuhiro Komori ◽  
Xue-Lun Wang ◽  
Mutsuo Ogura ◽  
Noriaki Tsurumachi
Keyword(s):  
High Resolution ◽  
Quantum Wire ◽  
Coherent Control ◽  
Michelson Interferometer

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

scholarly journals Designing the Hotspots Distribution by Anisotropic Growth

Molecules ◽  
2021 ◽  
Vol 26 (1) ◽  
pp. 187
Author(s):  
Tianshun Li ◽  
Renxian Gao ◽  
Xiaolong Zhang ◽  
Yongjun Zhang
Keyword(s):  
Au Nanoparticles ◽  
Fdtd Method ◽  
Polarization Dependence ◽  
Noble Metal Nanoparticles ◽  
Oblique Angle Deposition ◽  
Matlab Simulation ◽  
Different Shapes ◽  
Plasma Enhancement ◽  
Difference Time ◽  
Good Agreement

Changing the morphology of noble metal nanoparticles and polarization dependence of nanoparticles with different morphologies is an important part of further research on surface plasma enhancement. Therefore, we used the method based on Matlab simulation to provide a simple and effective method for preparing the morphologies of Au nanoparticles with different morphologies, and prepared the structure of Au nanoparticles with good uniformity and different morphologies by oblique angle deposition (OAD) technology. The change of the surface morphology of nanoparticles from spherical to square to diamond can be effectively controlled by changing the deposition angle. The finite difference time domain (FDTD) method was used to simulate the electromagnetic fields of Au nanoparticles with different morphologies to explore the polarization dependence of nanoparticles with different shapes, which was in good agreement with Raman spectrum.

3D-Simulation of Novel Quantum Wire Transistors

1997 ◽  
Vol 204 (1) ◽  
pp. 346-349 ◽  
Author(s):  
C. Pigorsch ◽  
W. Wegscheider ◽  
W. Klix ◽  
R. Stenzel
Keyword(s):  
Quantum Wire ◽  
3D Simulation

Polarization-dependence of the Raman response of free-standing strained Ce0.8Gd0.2O2 membranes

2021 ◽  
Author(s):  
Alexander Konetschny ◽  
Marcel Weinhold ◽  
Christian Heiliger ◽  
Matthias Thomas Elm ◽  
Peter J. Klar
Keyword(s):  
Thin Films ◽  
Strain State ◽  
Polarization Dependence ◽  
Raman Mapping ◽  
Free Standing ◽  
Excitation Light ◽  
Oriented Polycrystalline ◽  
Raman Response

Square-shaped Ce0.8Gd0.2O2 (GDC) membranes are prepared by microstructuring techniques from (111)-oriented, polycrystalline GDC thin films. The strain state of the membranes is investigated by micro-Raman mapping using polarized excitation light....

Sign in / Sign up

Export Citation Format

Share Document