Controlling Nonlinearities in Semiconductor Superlattice Multipliers

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

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Detection of Bloch oscillations in a semiconductor superlattice by time-resolved terahertz spectroscopy and degenerate four-wave mixing

Solid-State Electronics ◽

10.1016/0038-1101(94)90417-0 ◽

1994 ◽

Vol 37 (4-6) ◽

pp. 1321-1326 ◽

Cited By ~ 22

Author(s):

Christian Waschke ◽

Patrick Leisching ◽

Peter Haring Bolivar ◽

Ralf Schwedler ◽

Frank Brüggemann ◽

...

Keyword(s):

Terahertz Spectroscopy ◽

Four Wave Mixing ◽

Wave Mixing ◽

Bloch Oscillations ◽

Time Resolved ◽

Semiconductor Superlattice ◽

Degenerate Four Wave Mixing

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Vapor Growth of a Semiconductor Superlattice

Journal of The Electrochemical Society ◽

10.1149/1.2408354 ◽

1971 ◽

Vol 118 (9) ◽

pp. 1459 ◽

Cited By ~ 29

Author(s):

A. E. Blakeslee

Keyword(s):

Vapor Growth ◽

Semiconductor Superlattice

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Edge strain relaxation in quantum wells grown on the cleaved edge of a strained semiconductor superlattice

Physical Review B ◽

10.1103/physrevb.55.6693 ◽

1997 ◽

Vol 55 (11) ◽

pp. 6693-6696 ◽

Cited By ~ 3

Author(s):

C. Priester ◽

S. J. Sferco

Keyword(s):

Quantum Wells ◽

Strain Relaxation ◽

Semiconductor Superlattice

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CONFINEMENT OF STATES ABOVE POTENTIAL BARRIERS IN SEMICONDUCTOR SUPERLATTICES

Modern Physics Letters B ◽

10.1142/s021798499300031x ◽

1993 ◽

Vol 07 (05) ◽

pp. 299-305 ◽

Cited By ~ 4

Author(s):

H. LUO ◽

J. K. FURDYNA

Keyword(s):

Confinement Effects ◽

Constructive Interference ◽

Semiconductor Superlattices ◽

Electron States ◽

Potential Barriers ◽

Semiconductor Superlattice

We discuss the localization of states whose energy exceeds potential barriers in a semiconductor superlattice. Although there are no confining potentials for such states, the potential discontinuities reflect the electron waves in such a way as to impose constructive interference conditions on the electron states, leading to significant confinement effects.

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CALCULATION OF THE INTENSITY-DEPENDENT ABSORPTION SPECTRUM IN TWO-DIMENSIONAL ELECTRON SYSTEMS

Modern Physics Letters B ◽

10.1142/s0217984911026061 ◽

2011 ◽

Vol 25 (11) ◽

pp. 863-872

Author(s):

TRAN CONG PHONG ◽

VO THANH LAM ◽

LUONG VAN TUNG

Keyword(s):

Phonon Scattering ◽

Two Dimensional ◽

Electron Systems ◽

Quantum Kinetic Equation ◽

Dimensional Electron ◽

Semiconductor Superlattice ◽

Optical Phonon Scattering ◽

Dependent Absorption ◽

Analytic Expression ◽

Two Dimensional Electron Systems

General analytic expression for the intensity-dependent absorption coefficient (IDAC) of an intense electromagnetic wave (IEMW) in two-dimensional electron systems (2DES) is obtained by using the quantum kinetic equation (QKE) for electrons in the case of electron–optical phonon scattering in a doped semiconductor superlattice (DSSL). The dependence of IDAC on the amplitude E0 and the photon energy ℏΩ of an IEMW, the energy ℏωp and the temperature for a specific n-i-p-i superlattice of GaAs : Si / GaAs : Be is achieved due to a numerical method. The computational results show that not only the dependence of IDAC on ℏΩ but also the dependence of IDAC on ℏωp can be applied to optically detect the electric subbands in a DSSL.

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