Analytical model for magnetic components including self-heating effects

2004 ◽  
Author(s):  
L.M. Escribano ◽  
R. Prieto ◽  
J.A. Oliver ◽  
J.A. Cobos ◽  
J. Uceda
Keyword(s):  
Analytical Model ◽  
Self Heating ◽  
Magnetic Components ◽  
Heating Effects

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

2012 ◽  
Vol 11 (1) ◽  
pp. 106-117 ◽  
Author(s):  
K. Raleva ◽  
D. Vasileska ◽  
A. Hossain ◽  
S.-K. Yoo ◽  
S. M. Goodnick
Keyword(s):  
Self Heating ◽  
Heating Effects

Detection and evaluation of self-heating effects in n+nn+AlxGa1-xAs devices by noise temperature measurements

1995 ◽  
Vol 10 (4) ◽  
pp. 515-522 ◽  
Author(s):  
M De Murcia ◽  
E Richard ◽  
J M Perraudin ◽  
A Boyer ◽  
A Benvenuti ◽  
...  
Keyword(s):  
Noise Temperature ◽  
Temperature Measurements ◽  
Self Heating ◽  
Heating Effects

Analysis of Self-Heating Effects on vertical FET according to Shallow Trench Isolation

2017 ◽  
Vol 137 ◽  
pp. 123-127
Author(s):  
Ilho Myeong ◽  
Dokyun Son ◽  
Hyunsuk Kim ◽  
Myounggon Kang ◽  
Hyungcheol Shin
Keyword(s):  
Shallow Trench Isolation ◽  
Self Heating ◽  
Heating Effects ◽  
Trench Isolation

scholarly journals Self-Heating Effects In Polysilicon Source Gated Transistors

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
R. A. Sporea ◽  
T. Burridge ◽  
S. R. P. Silva
Keyword(s):  
Self Heating ◽  
Heating Effects

Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels

2017 ◽  
Vol 64 (11) ◽  
pp. 4393-4399 ◽  
Author(s):  
Jun-Young Park ◽  
Byung-Hyun Lee ◽  
Ki Soo Chang ◽  
Dong Uk Kim ◽  
Chanbae Jeong ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Self Heating ◽  
Heating Effects

Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

1995 ◽  
Vol 379 ◽  
Author(s):  
Jeffrey J. Welser
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Mos Transistors ◽  
Strained Si ◽  
Self Heating ◽  
Experimental Application ◽  
Heating Effects ◽  
Enhanced Mobility ◽  
Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

2002 ◽  
Vol 81 (18) ◽  
pp. 3491-3493 ◽  
Author(s):  
A. Chitnis ◽  
J. Sun ◽  
V. Mandavilli ◽  
R. Pachipulusu ◽  
S. Wu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Self Heating ◽  
Heating Effects ◽  
High Pump ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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