Comparative properties of titanium oxide biomaterials grown by pulsed vacuum arc plasma deposition and by unbalanced magnetron sputtering(UBM)

Author(s):  
Y.X. Leng ◽  
J.Y. Chen ◽  
G.J. Wan ◽  
H. Sun ◽  
P. Yang ◽  
...  
2016 ◽  
Vol 15 (01n02) ◽  
pp. 1550027 ◽  
Author(s):  
A. A. Lepeshev ◽  
I. V. Karpov ◽  
A. V. Ushakov ◽  
L. Yu. Fedorov ◽  
A. A. Shaihadinov

Physical vapor deposition techniques such vacuum arc plasma deposition — which are very commonly used in thin film technology — appear to hold much promise for the synthesis of nanocrystalline thin films as well as nanoparticles. Monodisperse and spherical titanium oxide (TiO2) and nitride nanoparticles were produced at room temperature as a cluster beam in the gas phase using a cluster-deposition source. Using the basic principles of the gas condensation method, this study has developed vacuum arc nanoparticle synthesis system. We demonstrate that major process deposition parameter is the pressure in the plasma chamber. This is the major advantage of these techniques over thermal evaporation. Our method affords TiN powders with high specific surface areas exceeding 200[Formula: see text]m2[Formula: see text]g[Formula: see text]. TEM micrograph of TiO2 nanoparticles prepared at an oxygen pressure of 60[Formula: see text]Pa show an average particle size of 6[Formula: see text]nm. TiO2 nanoparticles prepared at an oxygen pressure of 70[Formula: see text]Pa were observed to not have a reduced average particle size.


2021 ◽  
Author(s):  
Young-Jun Jang ◽  
Jae-Il Kim ◽  
Won-seok Kim ◽  
Ji-Woong Jang ◽  
Dohyun Kim ◽  
...  

Abstract We report the structure, mechanical properties, thermal stability, and durability of Si-doped tetrahedral amorphous carbon (Si-ta-C) coatings fabricated using simultaneous filtered cathodic vacuum arc deposition and direct current unbalanced magnetron sputtering. Si doping of 1.25–6.04 at.% was achieved by increasing the unbalanced magnetron sputtering power from 25 to 175 W. Si doping provided functionality to the coating, such as heat resistance, while retaining the high hardness of ta-C coatings. The Si-ta-C coatings were stable up to 600 °C regardless of the Si content, while the coating containing 3.85 at.% Si was stable up to 700 °C. The friction behavior and mechanical properties were dependent on the coating film before and after annealing at 100–200 °C; however, annealing at 300–400 °C decreased disk wear and increased counterpart wear due to an increase in film hardness on account of an endothermic reaction that increased the number of Si–C bonds. This indicates that the basic hardness characteristics of the ta-C coating and the high-temperature structural change of the Si-ta-C coating are important for ensuring high-temperature durability. These characteristics were verified through the low coefficient of friction and wear rate of the 1.25 at.% Si-ta-C coating after annealing at 500 °C.


2016 ◽  
Author(s):  
Eka Nurfani ◽  
Angga Virdian ◽  
Robi Kurniawan ◽  
Shibghatullah Muhammady ◽  
Inge M. Sutjahja ◽  
...  

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